[19p-P2-1~19] 9.2 Nanowires, nanoparticles

[19p-P2-5] Formation of in-plane oriented InAs nanowires on GaAs(211)B Masked Substrates by Selective Area Molecular Beam Epitaxy

^○Masashi Akabori¹, Tatsuya Murakami¹, Syoji Yamada¹ (CNMT, JAIST¹)

Keywords:ナノワイヤ,InAs,領域選択MBE