[19p-P3-1~6] 9.3 Nanoelectronics

[19p-P3-2] Electrical Properties of Nanogap-Based Single-Electron Transistors Using Field-Emission-Induced Electromigration

^○Kohei Morihara¹, Ryutaro Suda¹, Kazuki Takikawa¹, Jun-ichi Shirakashi¹ (Tokyo Univ. Agr. & Tech.¹)

Keywords:単電子トランジスタ,ナノギャップ,エレクトロマイグレーション