Ion Beam Analysis Quaternary Heusler Alloy Co2(Mn1-xFex)Si Epitaxially Grown on Ge(111)

Yuki Kawakubo

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-P8-1~10] 14.1 Physical properties of exploratory materials

Thu. Sep 19, 2013 1:30 PM - 3:30 PM P8 (Davis Memorial Auditorium)

1:30 PM - 3:30 PM

[19p-P8-8] Ion Beam Analysis Quaternary Heusler Alloy Co₂(Mn_1-xFe_x)Si Epitaxially Grown on Ge(111)

^○Yuki Kawakubo¹, Yuuya Noguchi¹, Kazumasa Narumi², Seiji Sakai², Kohei Hamaya³, Masanobu Miyao³, Yoshihito Maeda^1,2 (Kyutech¹, JAEA², Kyushu Univ.³)

Keywords:イオンビーム解析

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Presentation information

[19p-P8-1~10] 14.1 Physical properties of exploratory materials

[19p-P8-8] Ion Beam Analysis Quaternary Heusler Alloy Co2(Mn1-xFex)Si Epitaxially Grown on Ge(111)

[19p-P8-8] Ion Beam Analysis Quaternary Heusler Alloy Co₂(Mn_1-xFe_x)Si Epitaxially Grown on Ge(111)