Polarized photoluminescence spectra from multi-stacked InGaAs quantum dots structure fabricated by ultrahigh-rate MBE growth technique

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.2 Ultrathin films and quantum nanostructures

Thu. Sep 19, 2013 1:30 PM - 3:30 PM P9 (Davis Memorial Auditorium)

1:30 PM - 3:30 PM

^○(DC)Fumihiko Tanoue^1,2, Hiroharu Sugawara¹, Kouichi Akahane², Naokatsu Yamamoto² (Tokyo Metro. Univ.¹, NICT²)

Keywords:量子ドット,偏光,MBE