[20a-C11-1~11] 9.3 Nanoelectronics

[20a-C11-6] Magneto resistance ratio measuring under superconductive gap on ferromagnetic single-electron transistor with superconductive island

^○(D)Masashi Takiguchi¹, Hiroshi Shimada¹, Yoshinao Mizugaki¹ (Univ. of Electro-Comm.¹)

Keywords:クーロン　ブロッケード,トンネル磁気抵抗効果,スピン蓄積