Theoretical investigations for N-pair formation on the GaAs(001)-(2×4) surfaces

Presentation information

Oral presentation

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D3 (MK 2F-201)

9:00 AM - 9:15 AM

^○Tomonori Ito¹, Tatsuhiko Sugitani¹, Toru Akiyama¹, Kohji Nakamura¹ (Mie Univ.¹)

Keywords:半導体表面,GaAs,窒素ペア形成