Molecular beam epitaxy of BaSi<sub>2</sub> epitaxial films exceeding 1.5 &#956;m on Si(111)

Ryota Takabe

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20a-D6-1~11] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D6 (MK 3F-301)

10:45 AM - 11:00 AM

[20a-D6-7] Molecular beam epitaxy of BaSi₂ epitaxial films exceeding 1.5 μm on Si(111)

^○(M1)Ryota Takabe¹, kotaro Nakamura¹, Masakazu Baba¹, Weijie Du¹, Muhammad Ajmal Khan¹, Kaoru Toko¹, Masato Sasase², Kosuke Hara³, Noritaka Usami^3,4, Takashi Suemasu^1,4 (Tsukuba Univ.¹, The Wakasa Wan Energy Research Center², Nagoya Univ.³, JST-CREST⁴)

Keywords:BaSi2,半導体,太陽電池

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Presentation information

[20a-D6-1~11] 14.1 Physical properties of exploratory materials

[20a-D6-7] Molecular beam epitaxy of BaSi2 epitaxial films exceeding 1.5 μm on Si(111)

[20a-D6-7] Molecular beam epitaxy of BaSi₂ epitaxial films exceeding 1.5 μm on Si(111)