The 74th JSAP Autumn Meeting,2013

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20a-D6-1~11] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D6 (MK 3F-301)

11:15 AM - 11:30 AM

[20a-D6-9] Formation and evaluation of BaSi2 films by RF sputttering on a heated glass substrate

○Nurul Amal Abdul Latiff1, Takahiro Yoneyama1, Tetsuo Shibutami2, Keitaro Matsumaru2, Kaoru Toko1, Takashi Suemasu1,3 (Inst. of Appl. Phys., Univ. Tsukuba1, Tosoh Corporation2, JST-CREST3)

Keywords:環境半導体,BaSi2,スパッタリング