Effect of high pressure water vapor annealing for ALD-Al<sub>2</sub>O<sub>3</sub> film on n-GaN

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D7 (MK 3F-302)

9:45 AM - 10:00 AM

^○Koji Yoshitsugu¹, Tomoaki Umehara¹, Masahiro Horita^1,2, Yasuaki Ishikawa^1,2, Yukiharu Uraoka^1,2 (NAIST¹, JST-CREST²)

Keywords:高圧水蒸気処理,堆積後熱処理,原子層堆積法