The 74th JSAP Autumn Meeting,2013

Presentation information

Print

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20a-D7-1~11] 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 9:00 AM - 12:00 PM D7 (MK 3F-302)

11:15 AM - 11:30 AM

[20a-D7-9] Effect of intermediate AlGaN layer on properties of GaN Schottky diodes

○(M2)Wancheng Ma1, Tamotu Hashizume1,2 (Graduate School of Information Science and Technology, Hokkdaido Univ1, JST-CREST2)

Keywords:AlGaN 緩衝層,GaNショットキー接合