Schottky Barrier Height Modulation of NiGe/Ge Junction by P segregation

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.5 Si process technology

Fri. Sep 20, 2013 1:00 PM - 3:00 PM B4 (TC2 1F-106)

2:30 PM - 2:45 PM

^○Yuya Minoura¹, Takuji Hosoi¹, Jin Matsugaki², Shin-ichiro Kuroki², Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹, Hiroshima Univ.²)

Keywords:NiGe,ショットキーバリア,リン