Theoretical Studies on Anisotropic Optical Gain Characteristics in Semipolar-Oriented InGaN Quantum-Well Laser Diodes

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Sep 20, 2013 1:00 PM - 2:45 PM B5 (TC2 2F-201)

2:30 PM - 2:45 PM

^○Shigeta Sakai¹, Atsushi Yamaguchi¹ (Kanazawa Inst. Tech.¹)

Keywords:InGaN,半極性,光学利得