[20p-C13-1~7] 9.4 Thermoelectric conversion

△ [20p-C13-1] Ga Implantation into P-doped SOI Layer by Focused Ion Beam and Its Seebeck Coefficient

^○Yuhei Suzuki^1,2, Salleh Faiz^1,3,4, Masaru Shimomura^2,3, Akihiro Ishida^2,3, Hiroya Ikeda^1,2,3 (RIE Shizuoka Univ.¹, Grad. Sch. of Eng. Shizuoka Univ.², Grad. Sch. of Sci. and Tech. Shizuoka Univ.³, JSPS Research Fellow⁴)

Keywords:Siナノワイヤ,ゼーベック係数,イオン注入