[20p-C8-1~5] 13.6 Siデバイス／集積化技術

[20p-C8-4] Transport via dopant-quantum-dots fabricated by thermal diffusion through nano-masks

^○（P）Daniel Moraru¹，Arup Samanta¹，Le The Anh²，Takeshi Mizuno¹，Hiroshi Mizuta^2,3，Michiharu Tabe¹ (静大電研¹，JAIST²，サザンプトン大³)

キーワード：single dopant,SOI-FET