The 74th JSAP Autumn Meeting,2013

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Oral presentation

15. Crystal Engineering » 15.7 Fundamentals of epitaxy

[20p-D3-1~6] 15.7 Fundamentals of epitaxy

Fri. Sep 20, 2013 1:00 PM - 2:30 PM D3 (MK 2F-201)

1:15 PM - 1:30 PM

[20p-D3-2] Ab initio-based approach to surface-structure change on wetting layer of InAs/GaAs(001)

○Kentaro Hirai1, Toru Akiyama1, Koji Nakamura1, Tomonori Ito1 (Mie Univ.1)

Keywords:InAs/GaAs,量子ドット