The 74th JSAP Autumn Meeting,2013

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[20p-D6-1~8] 14.1 Physical properties of exploratory materials

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D6 (MK 3F-301)

1:00 PM - 1:15 PM

[20p-D6-1] Electrical property of highly crystalline Mg2Si films prepared by sputtering method

Shota Ogawa1, Atsuo Katagiri1, Masaaki Matsushima1, Kensuke Akiyama1,2, Yoshisato Kimura1, Hiroshi Uchida3, Hiroshi Funakubo1 (Tokyo Inst. of Tech.1, Kanagawa Inds. Tech. Cent.2, Sophia Univ.3)

Keywords:熱電材料,薄膜,スパッタリング法