The 74th JSAP Autumn Meeting,2013

Presentation information

Print

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[20p-D7-1~8] 14.3 Electron devices and Process technology

Fri. Sep 20, 2013 1:00 PM - 3:00 PM D7 (MK 3F-302)

2:15 PM - 2:30 PM

[20p-D7-6] Interface properties of n-GaN MIS Diodes with ZrO2/Al2O3 multi-layers

○(D)Shintaro Kodama1, Hirokuni Tokuda1, Masaaki Kuzuhara1 (University of Fukui1)

Keywords:GaN,MIS Diode,Interface propaty