Regular sessions(Poster presentation)

21. Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[27a-PB4-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 27, 2013 9:30 AM - 11:30 AM PB4 (2nd gymnasium)

Poster Session 9:30〜11:30(PB)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27a-PB4-1] Evaluation of electronic and optical properties in oxide semiconductors (III)-Correlations between photoconductivity and thermal annealing conditions in IGZO films?

^○Tomoya Kishi¹, Aya Hino¹, Shinya Morita¹, Shuji Kosaka¹, Kazushi Hayashi¹, Toshihiro Kugimiya¹ (KOBE STEEL, LTD.¹)

[27a-PB4-2] Evaluation of Trap States in Amorphous In-Ga-Zn-O Using 40-nm-thick Metal-Oxide-Semiconductor Diodes (2)

^○Shuji Kosaka¹, Hiroaki Tao¹, Shinya Morita¹, Aya Hino¹, Satoshi Yasuno², Tomoya Kishi¹, Kazushi Hayashi¹, Toshihiro Kugimiya¹ (Kobe Steel, Ltd¹, KOBELCO Research Institute, Inc²)

[27a-PB4-3] Evaluation of Defects in Crystalline IGZO Powder Induced by Plasma

^○Tokiyoshi Matsuda^1,2, Daiki Nishimoto¹, Kota Takahashi¹, Taiki Ueno¹, Mutsumi Kimura^1,2 (Ryukoku Univ.¹, Ryukoku Univ. JRCST²)

[27a-PB4-4] Dry etching process for a-IGZO device fabrication

^○Takashi Shimizu¹ (AIST NeRI¹)

[27a-PB4-5] Low Temperature Fabrication of ZnO-SnO₂ TFT

^○Kazuo Satoh¹, Yoshiharu Yamada¹, Shuichi Murakami¹, Yoshiharu Kakehi¹, Yoshiaki Sakurai¹ (TRI-Osaka¹)

[27a-PB4-6] Sol-Gel ZnO films crystallized under an electric field and Thin Film Transistor

^○Masaki Kashiwaya¹ (Akita Prefectural Univ.¹)

[27a-PB4-7] Surface Morphology and Crystalline Structure of Transparent Conductive ZnO Films Formed by Magnetron Sputtering

^○Naoki Yamamoto¹, Kirihiko Morisawa¹ (Kochi Univ. of Technol.¹)

[27a-PB4-8] Fabrication of Ga-doped ZnO epitaxial thin films by an aqueous solution process

^○Masao Miyake¹, Hiroshi Fukui¹, Toshiya Doi¹, Tetsuji Hirato¹ (Kyoto Univ.¹)

[27a-PB4-9] Growth and characterization of ZnO-based films deposited on the metal thin films

^○（M1）Takahiro Hirano¹, Hideki Yoshioka², Shin-ici Yamamoto¹ (Ryukoku Univ.¹, Hyogo Pref. Inst. of Tech.²)

[27a-PB4-10] Evaluation of transparent conductive multilayer coating consisting of silver layer and transparent metal oxide layers

^○（B）Yoshichika Katsurata¹, Hiroki Shimomura¹, Gou Kageyama¹, Hideki Yoshioka², Shin-ichi Yamamoto¹ (Ryukoku Univ¹, Hyogo Pref. Inst.²)

[27a-PB4-11] Growth of ZnO thin films on PET substrate by Reactive DC sputtering Technique

^○Ryota Kimura¹, Hiroshi Nishigaki¹, Noriyuki Hasuike¹, Jung Gon Kim¹, Hiroshi Yamamoto¹, Kouhei Idehara¹, Toshiyuki Issiki¹, Kenji Kisoda², Hiroshi Harima¹ (Kyoto Inst.of Tech¹, Wakayama Univ²)

[27a-PB4-12] Structural analysis of ZnO thin films grown on polymer film

^○Hiroshi Yamamoto¹, Kouhei Idehara¹, Hiroshi Nishigaki¹, Ryouta Kimura¹, Noriyuki Hasuike¹, Hiroshi Harima¹, Toshiyuki Isshiki¹ (Kyoto Institute of Technology¹)

[27a-PB4-13] Fabrication of Ga-In-O films by molecular precursor method

^○Taihei Yasuno¹, Takuto Oda¹, Hiroki Nagai¹, Hiroki Hara¹, Mitsunobu Sato¹, Tohru Honda¹ (Kogakuin Univ.¹)

[27a-PB4-14] Reconstruction of Mg concentration profile driven by spontaneous polarization in MgZnO/ZnO heterostructures

^○Kotaro Imasaka¹, Joseph Falson¹, Atsushi Tsukazaki^2,3, Yuusuke Kozuka¹, Masashi Kawasaki¹ (Dept. Appl. Phys. Univ. of Tokyo¹, Dept. Adv. Mat. Sci. Univ. of Tokyo², JST-PRESTO³)

[27a-PB4-15] Low Temperature Growth of Cu-O and ZnO Films and Attempts of pn Hetero-junction Formation by Chemical Bath Deposition

^○（B）Masayuki Kitamine¹, Toshihiro Murakami², Hiroaki Shinohara¹, Tomoaki Terasako², Akira Miyata¹, Sho Shirakata² (Fac. Eng. Ehime Univ.¹, Grad. School of Sci. & Eng. Ehime Univ.²)

[27a-PB4-16] △Growth of high quality ZnO films by using high speed rotating disk type MOCVD

^○Yuto Hiragino¹, Yutaka Furubayashi², Kyota Moriyama¹, Yasuhisa Fujita¹ (Graduate school of Sci. & Eng. Shimane Univ.¹, Organization for the Promotion of Project Research Shimane Univ.²)

[27a-PB4-17] Growth of MgxZn1-xO thin film using MeCp2Mg source by RPE-MOCVD

^○（B）Nobuaki Ohmura¹, Sanjay Mohanta², Atsushi Nakamura², Jiro Temmyo^1,2 (Shizuoka Univ.¹, Shizuoka Univ. Res.Inst.of Electronics²)

[27a-PB4-18] Thick film growth of zinc oxide on n-type GaN by electrodeposition

Mitsuteru Sainokami¹, Junpei Ikegami¹, ^○Kazuyuki Uno¹, Ichiro Tanaka¹ (Wakayama Univ.¹)

[27a-PB4-19] △N-type ZnO films and substrates for solution-processable LED with ZnO nanoparticles

^○Kyota Moriyama¹, Wan Mohd Hafizuddin Bin Wan Mansor¹, Hiroki Joudai¹, Yutaka Furubayashi², Hideki Hashimoto², Yasuhisa Fujita¹ (Graduate school of Sci. & Eng. Shimane Univ.¹, Organization for the Promotion of Project Research Shimane Univ.²)

[27a-PB4-20] Photoluminescence and Photoluminescence Excitation Spectra of Ga-doped ZnO Films Prepared by Atmospheric-pressure CVD and Ion Plating

^○Tomoaki Terasako¹, Shohei Fujimoto¹, Yoshinori Ogura¹, Huaping Song², Hisao Makino², Masakzu Yagi³, Sho Shirakata¹, Tetsuya Yamamoto² (Grad. School Sci. & Eng. Ehime Univ.¹, Research Inst. Kochi Univ. Tech.², Kagawa Nat. Col. Tech.³)

[27a-PB4-21] Local structure of ZnMgO films studied by synchrotron X-ray absorption spectroscopy

^○Ken-ichi Ogata¹, Michał Kozub², Kazuto Koike¹, Shigehiko Sasa¹, Masataka Inoue¹, Mitsuaki Yano¹, Yusuke Tamenori³ (Osaka Inst. Tech.¹, Wroclaw Univ. Tech.², JASRI/SPring-8³)

[27a-PB4-22] Optical and electrical properties of individual ZnO nanowires studied by low-temperature nano-probe cathodoluminescence technique

^○（P）Kentaro Watanabe^1,2, János Volk³, Seungjin Oh¹, Takahiro Nagata¹, Yutaka Wakayama¹, Takashi Sekiguchi^1,2 (NIMS¹, Univ. of Tsukuba², MFA³)

[27a-PB4-23] Determination of polarity for ZnO films by measuring Zeta potential

^○（PC）Yutaka Furubayashi¹, Yuto Hiragino², Hideki Hashimoto¹, Yasuhisa Fujita² (Org. Promoting Project Res., Shimane Univ.¹, Graduate school of Sci. & Eng., Shimane Univ.²)

[27a-PB4-24] Fabrication of high-mobility widegap semiconductor ZnInON by RF magnetron sputtering

^○（M1）Koichi Matsushima¹, Kazunari Kuwahara¹, Tadafumi Hirose¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Hyunwoong Seo¹, Giichiro Uchida¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki^1,2 (Kyushu Univ¹, JST-PRESTO²)

[27a-PB4-25] Substrate dependence on crystal grain growth of Nb-doped TiO₂ thin film

^○Sota Inoue¹, Seiji Ichiyanagi¹, Shuhei Funaki¹, Yasuji Yamada¹ (Shimane Univ.¹)

Session information

[27a-PB4-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"