[27p-G21-1~18] 15.4 III-V-group nitride crystals

Wed. Mar 27, 2013 1:00 PM - 6:00 PM G21 (B5 4F-2405)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27p-G21-0] Lunch(75min)

[27p-G21-1] Realization of m-plane GaInN thick films grown by nano-ELO method

^○（B）Keiya Kozaki¹, Shinniro Kondo¹, Takayoshi Tsuchiya¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Isamu Akasaki^1，2 (Meijo Univ.Fac. Sci. & Tech.¹)

[27p-G21-2] △Influences of high growth rate AlInN by MOVPE

^○（B）Yugo Kozuka¹, Tomoyuki Suzuki¹, Takatoshi Morita¹, Tetuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research Center , Nagoya Univ.²)

[27p-G21-3] △Influence of c-plane Sapphire Substrate Miscut Angle on Indium Content of MOVPE-grown N-polar InGaN Alloys

^○Kanako Shojiki¹, Jung-Hung Choi^1,2, Hirofumi Shindo¹, Takeshi Kimura^1,2, Tomoyuki Tanikawa^1,2, Takashi Hanada^1,2, Ryuji Katayama^1,2, Takashi Matsuoka^1,2 (IMR Tohoku Univ.¹, JST-CREST²)

[27p-G21-4] △Observation of GaInN/GaN superlattice structures by in situ X-ray diffraction during MOVPE growth

^○（B）Taiji Yamamoto¹, Daisuke Iida¹, Yasunari Kondo¹, Mihoko Sowa¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Res. Cen.,Nagaya Univ.²)

[27p-G21-5] ▲In situ X-ray measurements of In-rich InGaN growth by MOVPE

^○（PC）Guangxu Ju¹, Yoshio Honda¹, Shingo Fuchi^1,3, Masao Tabuchi², Hiroshi Amano^1,3, Yoshikazu Takeda⁴ (Nagoya Univ. Graduate School of Engineering¹, Synchrotron Radiation Research Center², Akasaki Research Center³, Aichi Science and Technology Foundation, Synchrotron Radiation Center⁴)

[27p-G21-6] ▲GaN thickness optimization by in-situ observation of GaN growth on Si (111)

^○Cai Liu¹, Hassanet Sodabanlu¹, Masakazu Sugiyama², Yoshiaki Nakano^{1, 2} (RCAST, The Univ. of Tokyo¹, School of Engineering, The Univ. of Tokyo²)

[27p-G21-6.1] Break(15min)

[27p-G21-7] △Reduction of threading dislocation of GaN on Si using AlGaN/AlN interlayer

^○Hisashi Yoshida¹, Toshiki Hikosaka¹, Naoharu Sugiyama¹, Shinya Nunoue¹ (Toshiba R&D Center¹)

[27p-G21-8] Dependence of dislocation density of c-plane GaN grown on cone patterned sapphire substrates on triangular lattice rotation angle

^○Yutaro Hirota¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

[27p-G21-9] Control of crystalline facets by Eu doping in selective area grown GaN

^○Ryosuke Hasegawa¹, Ryuta Wakamatsu¹, Takehiro Tamaoka¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

[27p-G21-10] △Influence of V/III ratio on the semipolar {11-22} GaN homoepitaxy

^○（DC）Junichi Nishinaka¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

[27p-G21-11] The island density of annealed LT-AlN layers and a crystalline quality of GaN films

^○Koji Okuno^1,2, Takahide Oshio², Naoki Shibata², Yoshio Honda¹, Masahito Yamaguchi¹, Shigeyasu Tanaka¹, Hiroshi Amano¹ (Nagoya Univ.¹, Toyoda Gosei²)

[27p-G21-12] △Effect of Sb on low-temperature-grown GaN

^○Tomoyuki Suzuki¹, Hiroki Sasajima¹, Yuuko Matsubara¹, Mitsuru Kaga¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ Fac. Sci.&Tech¹, Akasaki Research Center, Nagoya Univ.²)

[27p-G21-12.1] Break(15min)

[27p-G21-13] △Enhancement of step flow in MOVPE-grown (0001)GaN by In-surfactant effect

^○（B）Takashi Aisaka¹, Tomoyuki Tanikawa^1,2, Kanako Shojiki¹, Takeshi Kimura^1,2, Takuya Iwabuchi¹, Takashi Hanada^1,2, Ryuji Katayama^1,2, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST-CREST.²)

[27p-G21-14] Strain-related Suppression of Fe Surface Segregation in Highly Resistive Fe-doped GaN Layer

^○Tetero Ishiguro¹, Atsushi Yamada¹, shuichi Tomabechi¹, Junji Kotani¹, Norikazu Nakamura¹, Toshihide Kikkawa¹, Keiji Watanabe¹, Kenji Imanishi¹ (Fujitsu Laboratories Ltd.¹)

[27p-G21-15] △Low resistive GaN tunnel junction on LED structures

^○（B）Daichi Minamikawa¹, Mitsuru Kaga¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo University¹, Akasaki Reserch Center²)

[27p-G21-16] ▲TEM observation near the center of the spiral in spiral grown N-face GaN(000-1)

^○Chia-Hung Lin¹, Tetsuya Akasaka¹, Hideki Yamamoto¹ (NTT Basic Research Lab.¹)

[27p-G21-17] ▲Improvement of the luminescence efficiency of N-face (000-1) InGaN multiple quantum wells by InGaN underlying layers

^○Chia-Hung Lin¹, Tetsuya Akasaka¹, Hideki Yamamoto¹ (NTT Basic Research Lab.¹)

[27p-G21-18] Molecular Dynamics Simulation of the Process of Nitrogen Incorporation in GaN Thin Film Growth

^○Takahiro Kawamura¹, Takafumi Miki¹, Hiroya Hayashi¹, Yasuyuki Suzuki¹, Yoshihiro Kangawa², Koichi Kakimoto² (Mie Univ.¹, RIAM, Kyushu Univ.²)

Session information

[27p-G21-1~18] 15.4 III-V-group nitride crystals