[27p-PB4-1~16] 13.5 Si process technology

Wed. Mar 27, 2013 1:30 PM - 3:30 PM PB4 (2nd gymnasium)

Poster Session 13:30〜15:30(PB)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[27p-PB4-1] Crystallization Process of Amorphous Germanium Thin Films by Surfactant-Crystallization Method using Ag

^○Naoya Mishiba¹, Masayuki Tanaka¹, Yousuke Inase¹, Hiroyuki Miura¹, Masao Kamiko², Kentaro Kyuno¹ (Shibaura Institute of Technology¹, Institute of Industrial Science, University of Tokyo²)

[27p-PB4-2] Crystallization of Germanium by Metal Induced Crystallization method using Gold

^○Toru Kanazawa¹, Yousuke Inase¹, Hiroyuki Miura¹, Masao Kamiko², Kentaro Kyuno¹ (Shibaura Inst Univ.¹, Toudai Inst.²)

[27p-PB4-3] Crystallization Process of Amorphous Silicon by Surfactant-Crystallization Method

^○Yuki Iijima¹, Jun Takayanagi¹, Tosinori Takee¹, Masao Kamiko², Kentaro Kyuno¹ (Shibaura Inst.¹, Todai Inst.²)

[27p-PB4-4] High performance poly-Si Thin Film Transistors with One-dimensionally Long Silicon Grain

^○（B）Masayuki Yamano¹, Shin-Ichiro Kuroki¹, Tadashi Sato¹, Koji Kotani² (Hiroshima Univ. RNBS¹, Tohoku Univ.²)

[27p-PB4-5] Epitaxial Process Developments towards Ultra-Small Germanium Photodetectors

^○Makoto Miura^1,2, Junichi Fujikata^1,2, Masataka Noguchi^1,2, Tsuyoshi Horikawa^1,3, Yasuhiko Arakawa^1,4 (PECST¹, PETRA², AIST³, IIS, Univ. Tokyo⁴)

[27p-PB4-6] Development of Silicon Wafer Thinning / Backside Via Exposure Process Using Wet Etching

^○Naoya Watanabe¹, Takumi Miyazaki², Masahiro Aoyagi¹, Kazuhiro Yoshikawa^3,4 (National Institute of Advanced Industrial Science and Technology¹, PRE-TECH AT CO., LTD.², Apprecia Technology Inc.³, Graduate School of Engineering, Tohoku University⁴)

[27p-PB4-7] △Fabrication and Characterization of Mesa-Etched Si junctions by Using Surface-Activated Bonding

^○M Morimoto¹, J Liang¹, T Miyazaki¹, S Nishida¹, N Shigekawa¹ (Osaka city Univ¹)

[27p-PB4-8] Development of Al Damage-less Insulating Film Etchant

^○Tsuguhiro Tago^1,2, Kunio Ichino², Mayumi Kimura¹, Atsushi Matsui¹ (HAYASHI PURE CHEMICAL IND.,LTD¹, Graduate School of Engineering, Tottori University²)

[27p-PB4-9] Artificial Neural Network using Thin-Film Transistors

Yuki Yamaguchi¹, Ryohei Morita¹, Yusuke Fujita¹, Tomoaki Miyatani¹, Tomohiro Kasakawa¹, Tokiyoshi Matsuda¹, ^○Mutsumi Kimura¹ (Ryukoku Univ.¹)

[27p-PB4-10] Integrated Potentiostat using Thin-Film Transistors

^○Mutsumi Kimura¹, Yoshiki Imuro¹, Yuki Sagawa¹, Tokiyoshi Matsuda¹ (Ryukoku Univ.¹)

[27p-PB4-11] Impact of Carbon Coimplantation on Boron Activation in Silicon

^○Yasuo Shimizu¹, Hisashi Takamizawa¹, Koji Inoue¹, Fumiko Yano^1,2, Yasuyoshi Nagai¹ (IMR Tohoku Univ.¹, Tokyo City Univ.²)

[27p-PB4-12] Comparative study of Schottky barrier height modulation in S-introduced NiGe/Ge and NiSi/Si junctions

^○Masahiro Koike¹, Yuuichi Kamimuta¹, Tsutomu Tezuka¹ (GNC, AIST¹)

[27p-PB4-13] Evaluation of electrical activation of impurities segregated at Ni-silicide/Si Schottky junction interface

^○Kohei Akita¹, Yohei Miyata¹, Kazuma Terayama¹, Masanori Takei¹, Kazuo Tsutsui¹, Hiroshi Nohira², Kuniyuki Kakushima¹, Ahmet Parlhat¹, Takeo Hattori¹, Hiroshi Iwai¹ (Tokyo Inst.¹, Tokyo City.²)

[27p-PB4-14] Observation of surface band bending of P incorporated NiSi₂/n-Ge using hard x-ray photoelectron spectroscopy

^○Ryo Yoshihara¹, Yuta Tamura¹, Kuniyuki Kakushima², Ahmet Parhat¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Takeo Hattori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

[27p-PB4-15] Mn doping to Si with Bi nanoline

^○（M1）Satoshi Tsubomatsu^1,2, Koichi Murata^1,2, Tamotsu Koyano², Koh-ichi Nittoh¹, Kazushi Miki^1,2 (NIMS¹, Univ. of Tsukuba²)

[27p-PB4-16] Tungsten-Based Pillar Deposition by Helium Ion Microscope and Beam-Substrate Interaction

^○（P）Kazuyuki Kohama^1,2, Tomohiko Iijima¹, Misa Hayashida¹, Shinichi Ogawa¹ (AIST¹, JSPS²)

Session information

[27p-PB4-1~16] 13.5 Si process technology