Session information

Regular sessions(Oral presentation)

08. Plasma Electronics » 8.4 Plasma etching

[28a-A5-1~6] 8.4 Plasma etching

Thu. Mar 28, 2013 9:15 AM - 10:45 AM A5 (K1 3F-303)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28a-A5-1] Silicon Etching using Neutral Beam (7)

^○Tomohiro Kubota^1,2, Kazuhiro Miwa², Altansukh Batnasan¹, Shingo Otsuka³, Naoki Watanabe³, Takuya Iwasaki³, Yasuroh Iriye³, Kohei Ono³, Masakazu Sugiyama^2,4, Seiji Samukawa^1,2,5 (IFS, Tohoku Univ.¹, BEANS², Mizuho I&R Inst.³, Univ. of Tokyo⁴, WPI-AIMR, Tohoku Univ.⁵)

[28a-A5-2] Analysis of Neutral Beam Generation Mechanism by First-Principle Electronic Structure Calculation VII

^○Naoki Watanabe¹, Shingo Otsuka¹, Takuya Iwasaki¹, Kohei Ono¹, Yasuro Irie¹, Shinji Ueki², Osamu Nukaga³, Masakazu Sugiyama^2,4, Tomohiro Kubota^2,5, Seiji Samukawa^2,5 (Mizuho Information & Research Institute, Inc.¹, BEANS project 3D BEANS center², Fujikura Ltd.³, University of Tokyo⁴, Tohoku University⁵)

[28a-A5-3] Modeling of Neutral Beam-Surface Interaction and Etching Profile Simulation (3)

^○Ohtsuka Shingo¹, Naoki Watanabe¹, Takuya Iwasaki¹, Kohei Ono¹, Yasuro Iriye¹, Syunsuke Mochizuki², Kazuhiro Miwa³, Masakazu Sugiyama^3,4, Tomohiro Kubota^3,5, Seiji Samukawa^3,5 (Mizuho Information & Research Institute, Inc.¹, Mathematical Systems, Inc.², BEANS project 3D BEANS center³, Univ. of Tokyo⁴, Tohoku Univ.⁵)

[28a-A5-4] Shape Simulation for Neutral Beam Etching (4)

^○Shunsuke Mochizuki¹, Naoki Watanabe², Shingo Ohtsuka², Takuya Iwasaki², Kohei Ono², Yasuroh Iriye², Kazuhiro Miwa³, Tomohiro Kubota^3,4, Masakazu Sugiyama^3,5, Seiji Samukawa^3,4 (Mathematical Systems Inc.¹, Mizuho Information & Research Institute Inc.², BEANS Project³, Tohoku Univ.⁴, Univ. of Tokyo⁵)

[28a-A5-5] Distribution of Atomic Hydrogen Density between Substrate and Electrode in High-Rate Etching of Si by Microwave Hydrogen Plasma

^○Takahiro Yamada^1,2, Kosuke Yamada¹, Hiromasa Ohmi^1,2, Hiroaki Kakiuchi^1,2, Kiyoshi Yasutake^1,2 (Osaka Univ.¹, JST CREST²)

[28a-A5-6] ▲In situ Surface analysis of GaAs irradiated by Cl plasma beams

^○Jongyun Park¹, Takuya Takeuchi¹, Kenji Ishikawa¹, Yuichi Setsuhara², Keigo Takeda¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹, Osaka Univ.²)

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