Regular sessions(Oral presentation)

10. Spintronics and Magnetics » 10.2 Spin torque, spin current, circuits, and measurement technologies

[28a-A7-1~11] 10.2 Spin torque, spin current, circuits, and measurement technologies

Thu. Mar 28, 2013 9:00 AM - 12:00 PM A7 (K1 3F-306)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28a-A7-1] Room-temperature magnetoresistance effect in Si

^○Tomoyuki Sasaki¹, Toshio Suzuki², Masashi Shiraishi³, Yoshishige Suzuki³, Hayato Koike¹, Tohru Oikawa¹ (TDK¹, AIT², Osaka univ.³)

[28a-A7-2] ▲Highly efficient spin injection into silicon using ferromagnetic tunnel contact with radical-oxidation-formed MgO barrier

^○Adiyudha Sadono¹, Taiju Akushichi¹, takao Okishio¹, Yusuke Shuto^1,2, Satoshi Sugahara^1,2 (ISEL, Tokyo Inst. of Tech¹, CREST, JST²)

[28a-A7-3] △Spin injection and observation of the inverse spin Hall effect in p-type Ge at room temperature

^○Mariko Koike¹, Eiji Shikoh¹, Yuichiro Ando¹, Teruya Shinjo¹, Shinya Yamada², Kohei Hamaya², Masashi Shiraishi¹ (Osaka Univ.¹, Kyushu Univ.²)

[28a-A7-4] Co₂FeAl_0.5Si_0.5 depositing temperature dependence of 4 terminal non-local signals in spin transport device with Co₂FeAl_0.5Si_0.5/n-GaAs junctions

^○（DC）Tatsuya Saito¹, Nobuki Tezuka¹, Masashi Matsuura¹, Satoshi Sugimoto¹ (Tohoku Univ.¹)

[28a-A7-5] ▼Annealing temperature dependence of spin signals observed in Co₂MnSi/CoFe/n-GaAs through four-terminal non-local geometry

^○Takafumi Akiho¹, Jinhai Shan¹, Ken-ichi Matsuda¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (Division of Electronics for Informatics, Hokkaido Univ.¹)

[28a-A7-6] ▼Bias voltage dependence of spin accumulation signals observed by the three-terminal Hanle measurements

^○Mizue Ishikawa¹, Hideyuki Sugiyama¹, Tomoaki Inokuchi¹, Tetsufumi Tanamoto¹, Kohei Hamaya², Nobuki Tezuka³ (Toshiba Corporate R&D Center¹, Department of Electronics, Kyushu Univ.², Department of Material Science, Tohoku Univ.³)

[28a-A7-6.1] Break(15min)

[28a-A7-7] ▼Spatial variation of satellite peaks in the Hanle curve induced by dynamic nuclear spin polarization in lateral all-semiconductor spin injection devices

^○（DC）Junichi Shiogai¹, Mariusz Ciorga², Tsutomu Nojima³, Dieter Schuh², Makoto Kohda¹, Dominique Bougeard², Dieter Weiss², Junsaku Nitta¹ (Dept. Materials Science, Tohoku Univ.¹, Univ. of Regensburg², IMR, Tohoku Univ.³)

[28a-A7-8] △Observation of electromotive force due to the inverse spin Hall effect in Ni₈₀Fe₂₀ layer

^○（M1）Ayaka Tsukahara¹, Yuta Kitamura¹, Eiji Shikoh¹, Yuichiro Ando¹, Teruya Shinjo¹, masashi Shiraishi¹ (Grad. Sch. of Eng. Sci., Osaka Univ.¹)

[28a-A7-9] Detection of giant electromotive force for Pd/Fe₃Si sample generated by spin pumping

^○Kohki Ichiba¹, Yuichiro Ando¹, Eiji Shikoh¹, Shinya Yamada², Kohei Hamaya², Teruya Shinjo¹, Masashi Shiraishi¹ (Osaka Univ.¹, Kyushu Univ.²)

[28a-A7-10] △Magnetoresistance due to the Spin Hall Effect

^○（D）Hiroyasu Nakayama¹, Matthias Althammer², Yan-Ting Chen³, Ken-ichi Uchida^1,4, Yosuke Kajiwara¹, Daisuke Kikuchi^1,5, Takashi Ohtani¹, Stephan Gepraegs², Matthias Opel², Saburo Takahashi¹, Rudolf Gross^2,6, Gerrit Bauer^1,3, Sebastian Goennenwein², Eiji Saitoh^1,5,7,8 (Institute for Materials Research, Tohoku Univ.¹, Walther-Meissner-Institut², Delft Univ. of Technology³, JST-PRESTO⁴, WPI Advanced Institute for Materials Research, Tohoku Univ.⁵, Technische Universitaet Muenchen⁶, JST-CREST⁷, ASRC, JAEA⁸)

[28a-A7-11] ▲Spin current modulation by spin motive force in lateral spin valve structures

^○Masahiko Ichimura^1,4, Jun'ichi Ieda^2,4, Saburo Takahashi^3,4, Sadamichi Maekawa^2,4 (CRL, Hitachi, Ltd.¹, ASRC, JAEA², IMR, Tohoku Univ.³, CREST-JST⁴)

Session information

[28a-A7-1~11] 10.2 Spin torque, spin current, circuits, and measurement technologies