Regular sessions(Oral presentation)

21. Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28a-G19-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 28, 2013 10:00 AM - 1:00 PM G19 (B5 4F-2403)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28a-G19-1] Annealing Effect of β-Molybdenum Trioxide Films Grown by Molecular Beam Epitaxy

^○（M1）Ryota Wada¹, Shinji Yagi¹, Kazuto Koike¹, Yoshiyuki Harada¹, Shigehiko Sasa¹, Mitsuaki Yano¹ (Osaka Inst.of Tech., NMRC¹)

[28a-G19-2] Synthesis of a Single-Phase Cu₂O Thin Film Utilizing Water Vapor Produced by Ultrasonic Spray

^○Than Htay Myo¹, Masahiko Okamura¹, Ryo Yoshizawa¹, Yoshio Hashimoto¹, Kentaro Ito¹ (Shinshu Univ.¹)

[28a-G19-3] Effects of Transition Metal Doping on Optical Properties of βｰGa₂O₃ Ⅱ : Cu-Doping effects

^○Akira Nakazawa¹, Dai Yasukawa¹, Hirohumi Wakai¹, Hisaya Oda¹, Akio Yamanaka¹ (Chitose Institute of Science and Technology¹)

[28a-G19-4] △Growth Control of Al_2xGa_2-2xO₃ Films on β-Ga₂O₃ (201) Substrates

^○Akira Mukai¹, Takayoshi Oshima¹, Kohei Sasaki², Takekazu Masui³, Akito Kuramata², Shigenobu Yamakoshi², Akira Ohtomo^1,4 (Tokyo Tech¹, Tamura Corp.², KOHA Co., Ltd³, TIES & MCES⁴)

[28a-G19-5] Formation of semi-insulating layers on β-Ga₂O₃ single crystals by thermal oxidation

^○Takayoshi Oshima¹, Kenichi Kaminaga¹, Akira Mukai¹, Kohei Sasaki², Takekazu Masui³, Akito Kuramata², Shigenobu Yanakoshi², Shizuo Fujita⁴, Akira Ohtomo^1,5 (Tokyo Tech¹, Tamura Corp.², KOHA Co., Ltd³, Kyoto Univ.⁴, TIES & MCES⁵)

[28a-G19-6] Polarized Raman spectra in β-Ga₂O₃ crystals

^○Takeyoshi Onuma^1-3, Shuhei Fujioka², Tomohiro Yamaguchi², Masataka Higashiwaki^3,4, Kohei Sasaki^3,5, Takekazu Masui⁶, Tohru Honda² (TNCT¹, Kogakuin Univ.², NICT³, JST PRESTO⁴, Tamura Corp.⁵, Koha Co., Ltd.⁶)

[28a-G19-6.1] Break(15min)

[28a-G19-7] Electrical Characteristics of Low-temperature Grown ZnO Films Deposited by Non-equilibrium Atmospheric Pressure Plasma

^○Yukinori Nose¹, Takuma Terakawa¹, Tatsuru Nakamura¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (Osaka Prefecture Univ.¹, Sekisui Chemical Co. Ltd.²)

[28a-G19-8] Growth and Characterization of Vanadium-Doped ZnO Thin Films by RF Magnetron Sputtering

^○Shuhei Okuda¹, Takuya Matsuo¹, Hiroshi Chiba¹, Tatsuya Mori¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

[28a-G19-9] Study of Crystal Structure of V doped ZnO Thin Film

^○Takuya Matsuo¹, Shuhei Okuda¹, Hiroshi Chiba², Tatsuya Mori², Katsuyoshi Washio^1,2 (Tohoku Univ. Graduate School of Engineering¹, Tohoku Univ. School of Engineering²)

[28a-G19-10] Effects of Annealing in Nitrogen and Oxygen on V-doped ZnO Thin Films

^○Hiroshi Chiba¹, Takuya Matsuo², Shuhei Okuda², Mori Takuya¹, Katsuyoshi Washio^1,2 (Tohoku Univ.¹, Tohoku Univ.²)

[28a-G19-11] Effects of Deposition Temperature and Annealing on V-doped ZnO Thin Films

^○Tatsuya Mori¹, Takuya Matsuo¹, Shuhei Okuda¹, Hiroshi Chiba¹, Katsuyoshi Washio¹ (Tohoku Univ.¹)

Session information

[28a-G19-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"