[28a-G22-1~13] 15.6 IV-group-based compounds

Thu. Mar 28, 2013 9:00 AM - 12:30 PM G22 (B5 4F-2406)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

[28a-G22-1] Growth of 2"φ 4H-SiC crystals from Si-Cr based solution

^○Takeshi Mitani^1,2, Naoyoshi Komatsu¹, Masayuki Okamura², Tetsuo Takahashi^1,2, Tomohisa Kato^1,2, Kazuo Kurashige^1,3, Toru Ujihara⁴, Yuuji Matsumoto⁵, Hajime Okumura^1,2 (FUPET¹, AIST², Hitachi Chemical³, Nagoya Univ.⁴, Tokyo Tech.⁵)

[28a-G22-2] △Real-time Observation of High Temperature Interface during Dissolution of SiC into Molten Alloy utilizing Interference Pattern

^○Sakiko Kawanishi¹, Takeshi Yoshikawa¹, Kazuki Morita¹, Hiroshi Suzuki², Hidemitsu Sakamoto² (The Univ. of Tokyo¹, Toyota Motor Corp.²)

[28a-G22-3] Microstructure of defect on the basal plane formed by the threading screw dislocation conversion during solution growth process

^○Shunta Harada¹, Ryota Kunimatsu¹, Miho Tagawa¹, Yuta Yamamoto², Shigeo Arai², Nobuo Tanaka², Toru Ujihara¹ (Nagoya Univ.¹, Nagoya Univ.²)

[28a-G22-4] ▲The effect of the solution flow velocity on the surface morphology in the solution growth of SiC

^○Can Zhu¹, Shunta Harada¹, Kazuaki Seki¹, Miho Tagawa¹, Yuji Matsumoto², Tomohisa Kato^3,4, Kazuo Kurashige^4,5, Hajime Okumura^3,4, Toru Ujihara¹ (Nagoya Univ.¹, Tokyo Tech², AIST³, FUPET⁴, Hitachi Chemical⁵)

[28a-G22-5] Polytype Control and Defect Suppression in Solution Growth of 3C-SiC

^○Kazuaki Seki¹, Shota Yamamoto¹, Shunta Harada¹, Toru Ujihara¹ (Nagoya Univ.¹)

[28a-G22-6] Dislocation and the surface morphology which is formed after MSE growth

^○Shinkichi Hamada¹, Hisashi Yoshioka¹, Hiroshi Kawami¹, Nobuhiko Nakamura¹, Yoshitaka Setoguchi¹, Toru Matsunami¹ (EcoTron Co., Ltd.¹)

[28a-G22-7] Dislocation conversion mechanisms by MSE growth

^○Shinkichi Hamada¹, Hisashi Yoshioka¹, Hiroshi Kawami¹, Nobuhiko Nakamura¹, Yoshitaka Setoguchi¹, Toru Matsunami¹ (Ecotron¹)

[28a-G22-7.1] Break(15min)

[28a-G22-8] Off-angle dependence on homoepitaxial growth on 4H-SiC(0001) Si-face

^○Kentaro Tamura^1,3, Chiaki Kudou^1,4, Keiko Masumoto^1,2, Kazutoshi Kojima^1,2 (FUPET¹, AIST², Rohm³, Panasonic⁴)

[28a-G22-9] △In-situ etching conditions of 4H-SiC Si-face substrates with vicinal off-angle

^○Keiko Masumoto^1,2, Kazutoshi Kojima^1,2, Sachiko Ito^1,2, Kentaro Tamura^1,3, Hajime Okumura^1,2 (FUPET¹, AIST², ROHM³)

[28a-G22-10] Fabrication of (000-1)4H-SiC MOS structures by ECR-sputtering

^○Eiji Waki¹, Shuichi Ono¹, Manabu Arai¹, Kimiyoshi Yamasaki¹ (New JRC¹)

[28a-G22-11] Interface Properties near Conduction Band Edge at Al₂O₃/SiC MOS Interfaces

^○Noriyuki Taoka¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹)

[28a-G22-12] Threshold voltage instability of SiC-MOSFETs

^○Junji Senzaki^1,2, Atsushi Shimozato², Kazutoshi Kojima^1,2, Shinsuke Harada^1,2, Keiko Ariyoshi¹, Takahito Kojima¹, Yasunori Tanaka^1,2, Hajime Okumura^1,2 (FUPET¹, AIST²)

[28a-G22-13] Thickness dependence of FTIR-ATR peaks of 4H-SiC thermal oxide films

^○Hirohisa Hirai¹, Koji Kita^1,2 (Univ. of Tokyo¹, JST-PRESTO²)

Session information

[28a-G22-1~13] 15.6 IV-group-based compounds