Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[28a-G5-1~10] 14.4 Optical properties and light-emitting devices

Thu. Mar 28, 2013 10:00 AM - 12:45 PM G5 (B5 1F-2105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28a-G5-1] MBE growth of Er₂O₃ on Si substrates

^○Hiroo Omi^1,2, Takehiko Tawara^1,2, Reina Kaji³, Takahito Hozumi³, Satoru Adachi³, Hideki Gotoh¹, Tetsuomi Sougawa¹ (NTT Basic Research Labs.¹, NTT Nanophotonics Center², Hokkaidou univ.³)

[28a-G5-2] Optical characteristics of Er₂O₃ epitaxial thin-films

^○Takehiko Tawara^1,2, Takahito Hozumi³, Hiroo Omi^1,2, Reina Kaji³, Satoru Adachi³, Hideki Gotoh¹, Tetsuomi Sogawa¹ (NTT Basic Research Labs.¹, NTT Nanophotonics Center², Hokkaido Univ.³)

[28a-G5-3] Er concentration dependent photoluminescence from sputter-deposited ZnO:Er films

^○Housei Akazawa^{1, 2}, Hiroyuki Shinojima³ (NTT MI Labs.¹, NTT NPC², Kurume NCT³)

[28a-G5-4] Preparation of rare-earth doped GaN films grown by compound-source MBE

^○Shinji Yudate¹, Yuki Koyama¹, Takamitsu Inoue¹, Akira Miyata¹, Sho Shirakata¹ (Ehime Univ.¹)

[28a-G5-5] Massive improvement in ultra-violet emission of thermal annealed AlGdN

^○Yuta Ishizu¹, Kuniyuki Ichii¹, Shinya Kitayama¹, Takashi Kita¹, Yoshitaka Chigi², Tetsurou Nishimoto², Hiroyuki Tanaka², Mikihiro Kobayashi², Tsuguo Ishihara³, Hirokazu Izumi³ (Kobe Univ.¹, YUMEX Inc.², Hyogo Prefectural Institute of Technology.³)

[28a-G5-5.1] Break(15min)

[28a-G5-6] Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites

^○Ryuta Wakamatsu¹, Dong-gun Lee¹, Koizumi Atsushi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

[28a-G5-7] Eu precursor dependence of luminescent sites in Eu-doped GaN

^○Ryuta Wakamatsu¹, Yasuhisa Saitou¹, Dong-gun Lee¹, Hironori Ofuchi², Tetsuo Honma², Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹, JASRI/SPring-8²)

[28a-G5-8] Control of formation of Eu optical centers by oxygen codoping in Eu doped GaN

^○Dong-gun Lee¹, Masaaki Matsuda¹, Ryuta Wakamatsu¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

[28a-G5-9] Atomic-scale structure of optically activated Sm dopants identified with site-selective X-ray absorption spectroscopy

^○Masashi Ｉｓｈｉｉ^1,2, Yongfeng Hu³, Tsun-Kong Sham³, Susumu Harako⁴, Xin-Wei Zhao⁴, Shuji Komuro⁵, Bruce Hamilton² (NIMS¹, Univ. Manchester², CLS³, Tokyo Univ. Sci.⁴, Toyo Univ.⁵)

[28a-G5-10] Visible electroluminescence of a n-TiO₂:Sm/p-NiO/p⁺-Si light emitting diode

^○Takuya Ohtsuki¹, Yutaka Aizawa¹, Susumu Harako¹, Syuji Komuro², Norie Hirao³, Xinwei Zhao¹ (Tokyo Univ. of Sci.¹, Toyo Univ.², JAEA³)

Session information

[28a-G5-1~10] 14.4 Optical properties and light-emitting devices