Symposium(Oral presentation)

Symposium » ・Recent status for fabrication and characterization of semiconductor quantum dots

[28p-G20-1~16] Recent status for fabrication and characterization of semiconductor quantum dots

Thu. Mar 28, 2013 2:00 PM - 6:30 PM G20 (B5 4F-2404)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-G20-0] Lunch(90min)

[28p-G20-1] Evolution of Quantum Dot Lasers through Improvements of MBE Technology

^○Kenichi Nishi^1,2, Takeo Kageyama^1,2, Keizo Takemasa^1,2, Mitsuru Sugawara^1,2, Yasuhiko Arakawa^1,3 (Nano Quine, Univ. of Tokyo¹, QD Laser, Inc.², IIS, Univ. of Tokyo³)

[28p-G20-2] Carrier relaxation process in Si-direct doped InAs/GaAs quantum dots

^○Ryuichi Hasegawa¹, Yukihiro Harada¹, Takashi Kita¹ (Kobe Univ.¹)

[28p-G20-3] Temperature-Controlled Symmetry of Linear Polarization of Photoluminescence from InGaAs-buried InAs Quantum Dots

^○Tomoya Tanaka¹, Kosuke Kikushima¹, Seisuke Nakashima^1,2, Kohki Mukai¹ (Yokohama National Univ.¹, Riken²)

[28p-G20-4] △Coherent Transfer and Retrieval of Picosecond Single Photon Pulses to a Quantum Dot Ensemble in the Telecommunication Wavelengtn Range

^○Kazumasa Suzuki¹, Kouichi Akahane², Naokatsu Yamamoto², Junko Ishi-Hayase¹ (Keio Univ.¹, National Institute of Information and Communications Technology(NICT)²)

[28p-G20-5] ▲An efficient single-photon source based on a metal-embedded nanocone structure incorporating an InAs quantum dot

^○Xiangming Liu¹, Tomoya Asano¹, Satoru Odashima¹, Hideaki Nakajima¹, Hirotaka Sasakura¹, Hidekazu Kumano¹, Ikuo Suemune¹ (RIES, Hokkaido Univ.¹)

[28p-G20-6] Effects of asymmetric coupling of the valence bands in InAlAs quantum dots

Shingo Ohno¹, Reina Kaji¹, Takahito Hozumi¹, ^○Satoru Adachi¹ (Hokkaido Univ.¹)

[28p-G20-7] Liquid Gated Quantum Dot Electric-Double-Layer Transistors

^○Kenji Shibata^1,2, Hongtao Yuan³, Yoshihiro Iwasa^3,4, Kazuhiko Hirakawa^1,2,5 (INQIE, Univ. of Tokyo¹, IIS, Univ. of Tokyo², Dept. Appl. Phys., Univ. of Tokyo³, CERG Riken⁴, CREST-JST⁵)

[28p-G20-7.1] Break(15min)

[28p-G20-8] △Growth of stacked In-flushed-QD layers emitting at 1um with a broadband spectrum

^○Yuji Hino¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Yoshimasa Sugimoto³ (Wakayama Univ.¹, NEC Corp.², NIMS³)

[28p-G20-9] AlGaAs/GaAs regrown of GaAs Nano Disks by Metalorganic Vapor Phase Epitaxy

^○Akio Higo¹, Yosuke Tamura^2,6, Mohd Erman Fauzi^2,6, Cédric Thomas^2,6, Makoto Igarashi^2,6, Weiguo Hu^2,6, Takayuki Kiba^3,6, Akihiro Murayama^3,6, Yunpeng Wang⁴, Masakazu Sugiyama⁵, Yoshiaki Nakano⁴, Seiji Samukawa^1,2,6 (WPI-AIMR, Tohoku Univ.¹, IFS, Tohoku Univ.², IST, Hokkaido Univ.³, RCAST, Univ. of Tokyo⁴, School of Eng., Univ. of Tokyo⁵, JST-CREST⁶)

[28p-G20-10] Silicon template processed by SPM oxidation and position control of quantum dot

^○Teppei Sakai¹, Seisuke Nakashima^1,2, Kohki Mukai¹ (Yokohama Nat Univ.¹, RIKEN²)

[28p-G20-11] Formation of quantum dot super lattice for high efficiency solar cell application

^○Yuta Shimizu¹, Ryutaro Shigehisa¹, Seisuke Nakashima^1,2, Koki Mukai¹ (Yokohama National University¹, RIKEN²)

[28p-G20-12] InGaAs quantum dot solar cell with high energy gap matrix layer

^○Yasushi Shoji^1,2, Katsuhiro Akimoto², Yoshitaka Okada¹ (RCAST, The Univ. of Tokyo¹, Inst. of Appl. Phys., Univ. of Tsukuba²)

[28p-G20-13] In-plane anisotropy of optical gain in a multilayered quantum dots grown by strain compensation technique

^○Osamu Kojima¹, Hideharu Tanaka¹, Takashi Kita¹, Kouichi Akahane² (Kobe Univ.¹, NiCT²)

[28p-G20-14] Photoluminescence property of closely-stacked InAs/GaAs quantum dots

^○Yukihiro Harada¹, Yusuke Bessho¹, Takashi Kita¹, Eiji Taguchi², Hidehiro Yasuda² (Kobe Univ.¹, Osaka Univ.²)

[28p-G20-15] ▼Relative strength of upconversion through Auger, thermal and two-step two-photon-absorption processes in InAs quantum structures

^○（P）David Tex^1,2, Itaru Kamiya³, Yoshihiko Kanemitsu^1,2 (ICR Kyoto Univ.¹, JST-CREST², Toyota Technological Inst.³)

[28p-G20-16] △Optical absorption and electric conductivity in three-dimensional silicon nanodisk superlattice

^○Makoto Igarashi^1,3, Rahman Mohammad M.^1,3, Weiguo Hu^1,3, Seiji Samukawa^1,2,3 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², JST-CREST³)

Session information

[28p-G20-1~16] Recent status for fabrication and characterization of semiconductor quantum dots