[28p-G22-1~19] 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-G22-0] Lunch(75min)

[28p-G22-1] Impact of sacrificial oxidation on thermally grown SiO₂/4H-SiC(0001) structures

^○Takuji Hosoi¹, Yusuke Uenishi¹, Shuhei Mitani², Yuki Nakano², Takashi Nakamura², Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹, ROHM²)

[28p-G22-2] ▼Impacts of hydrogen annealing induced mobile ions on thermal SiO₂/SiC interface property

^○（D）Atthawut Chanthaphan¹, Shuhei Mitani², Yuki Nakano², Takashi Nakamura², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka University¹, ROHM CO., LTD.²)

[28p-G22-3] Low temperature fabrication of Ohmic contact for p-type 4H-SiC using Al/Ti/Sn

^○Kota Hatayama¹, Keisuke Yamamoto^2,3, Dong Wang¹, Hiroshi Nakashima² (Kyushu Univ. I-EggS¹, Kyushu Univ. KASTEC², JSPS research fellow³)

[28p-G22-4] △Frabrication and Characterization of n-Si/n-4H-SiC heterojunctions by Using Surface-Activated Bonding

^○Jianbo Liang¹, Tatusya Miyazaki¹, Syouta Nisida¹, Masasi Morimoto¹, Naoteru Shigekawa¹ (Osaka City University¹)

[28p-G22-5] Phosphorus Doping of 4H SiC using Laser Irradiation in Phosphoric Solution

^○Akihiro Ikeda¹, Koji Nishi¹, Daichi Marui¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (Kyushu Univ.¹)

[28p-G22-6] ▼Enhanced Photoelectrochemical Properties of 3C-SiC by Pt co-catalysts

^○Jun Tae Song¹, Yoshifumi Nakamine¹, Takayuki Iwasaki¹, Mutsuko Hatano¹ (Tokyo Tech¹)

[28p-G22-7] △High-Temperature Operation of SiC pn Photodiode up to 500°C

^○Naoki Watanabe¹, Tsunenobu Kimoto¹, Jun Suda¹ (Kyoto Univ.¹)

[28p-G22-8] 21-kV SiC BJTs With Space-Modulated Junction Termination Extension

^○Takafumi Okuda¹, Hiroki Miyake¹, Tsunenobu Kimoto¹, Jun Suda¹ (Kyoto Univ.¹)

[28p-G22-9] Carrier density dependence of Fano type interference in Raman spectra of p-type 4H-SiC

^○Takeshi Mitani¹, Masaru Tomobe¹, Shinichi Nakashima¹, Shi-yang Ji¹, Kazutoshi Kojima¹, Hajime Okumura¹ (AIST¹)

[28p-G22-9.1] Break(15min)

[28p-G22-10] Electrically detected magnetic resonance spectroscopy on interface defects in 4H-SiC(000-1) C-face metal-oxide-semiconductor field effect transistors

^○Takahide Umeda¹, Yoshihiro Satoh¹, Ryo Arai¹, Mitsuo Okamoto², Shinsuke Harada², Ryouji Kosugi², Hajime Okumura², Takahiro Makino³, Takeshi Ohshima³ (Univ. of Tsukuba¹, AIST², JAEA³)

[28p-G22-11] Characterization of Mg-Implanted 4H-SiC layers

^○Tatsuya Morine¹, Kohji Murata¹, Hiroaki Iida¹, Akifumi Kasai¹, Hideharu Matsuura¹, Shinji Nagamachi² (Osaka Electro-Communication Univ.¹, Ion Technology Center Co., Ltd²)

[28p-G22-12] Determination of stacking structure of 10H-SiC by Raman scattering measurements and Raman intensity calculation

^○（M1C）Masaru Tomobe^1,2, Takeshi Mitani², Sin-ichi Nakashima², Hiroki Fujimori¹, Takuro Tomita³, Natuki Kuwahara³, Sin-ichi Nishizawa², Hajime Okumura² (Nihon Univ.¹, AIST², Univ. Tokushima³)

[28p-G22-13] △Relation between Z_1/2 center and the charge collection efficiency of SiC high-energy particle detectors

^○（PC）Naoya Iwamoto¹, Brett Johnson¹, Norihiro Hoshino², Masahiko Ito², Hidekazu Tsuchida², Kazutoshi Kojima³, Takeshi Ohshima¹ (JAEA¹, CRIEPI², AIST³)

[28p-G22-14] Correlation between micro-PCD signals and excess carrier concentrations in SiC

^○Masashi Kato¹, Yuto Mori¹, Masaya Ichimura¹ (Nagoya Inst. of Tech.¹)

[28p-G22-15] △Evaluation of 4H-SiC surfaces after reactive ion etching by the μ-PCD method

^○Yuto Mori¹, Masashi Kato¹, Masaya Ichimura¹ (Nagoya Inst. of Tech.¹)

[28p-G22-16] Temperature dependence of capture cross sections for deep levels in p-type 4H-SiC

^○Kazuki Yoshihara¹, Masashi Kato¹, Masaya Ichimura¹, Tomoaki Hatayama², Takeshi Ohshima³ (Nagoya Inst of Tech.¹, NAIST.², JAEA³)

[28p-G22-17] △Identification of Origin of Z_1/2 Center in 4H-SiC by DLTS and EPR

^○Koutarou Kawahara¹, T.Nguyen Son², Jun Suda¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹, Linkoping Univ.²)

[28p-G22-18] △Characterization of extended defects in n-type and p-type SiC using Photoluminescence imaging

^○Chihiro Kawahara¹, Jun Suda², Tsunenobu Kimoto² (Kyoto Univ.¹, Kyoto Univ.²)

[28p-G22-19] △Polarization of Photoluminescence from Partial Dislocations in 4H-SiC

^○Rii Hirano^1,2, Tsuchida Hidekazu³, Michio Tajima¹, Kohei. M Itoh², Koji Maeda⁴ (ISAS/JAXA¹, Keio Univ.², CRIEPI³, Univ. Tokyo⁴)

Session information

[28p-G22-1~19] 15.6 IV-group-based compounds