Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[28p-G5-1~15] 14.4 Optical properties and light-emitting devices

Thu. Mar 28, 2013 2:00 PM - 6:00 PM G5 (B5 1F-2105)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-G5-0] Lunch(75min)

[28p-G5-1] Characterization of non-radiative recombination centers in InGaN quantum well by two-wavelength excited photoluminescence

^○Naoki Murakoshi¹, Islam Touhidul¹, Takeshi Fukuda¹, Norihiko Kamata¹, Yasuhiko Arakawa² (Saitama Univ.¹, *Univ. Tokyo²)

[28p-G5-2] Analysis of the photoluminescent properties of InAs/InGaAsP/InP quantum dots structure

^○（M1）Rie Sato¹, Mariya Nakamura¹, Hajime Imai¹ (Japan Women's Univ.¹)

[28p-G5-3] Self-charge-redistribution in anodized porous Al₂O₃ and enhancement of photoluminescence

^○Masashi Ishii^1,2, Bruce Hamilton² (NIMS¹, Univ. Manchester²)

[28p-G5-4] Synthesis and photoluminescence properties of one-dimensional arrays of CdSe/ZnS nanocrystals linked by DNA-oligomers

^○Oda Masaru^1,2, Naemura Sachio², Mukasa Takahiro², Zako Tamotsu³, Maeda Mizuo³, Tani Toshiro^1,2 (Div. of Adv. Appl. Phys., Inst. of Eng., Tokyo Univ. of Agri. & Tech¹, Dep. of Appl. Phys., Inst. of Eng., Tokyo Univ. of Agri. & Tech.², Bioengineering Lab., RIKEN Inst.³)

[28p-G5-5] Optical properties of CdSe and (CdMn)Se nanosheet superlattices

^○Kazuki Fujisawa¹, Akimasa Yuasa¹, Kiyoto Matsuishi¹ (Institute of Materials Science, University of Tsukuba¹)

[28p-G5-6] Direct-indirect discrimination of EL under longitudinal electrical field in bulk Ge

^○Yosuke Terada¹, Yuhsuke Yasutake¹, Susumu Fukatsu¹ (Grad. School of Arts and Sciences, Univ. of Tokyo¹)

[28p-G5-7] Colloidal Ge nanocrystals dispersible in polar liquids

^○（B）Takashi Kanno¹, Hiroshi Sugimoto¹, Minoru Fujii¹, Kenji Imakita¹, Shinji Hayashi¹ (Kobe Univ.¹)

[28p-G5-7.1] Break(15min)

[28p-G5-8] Minority Carrier Recombination at Crystalline Silicon Surfaces in MOS Structure

^○jun Furukawa¹, Shinya Yoshidomi¹, Masahiko Hasumi¹, Toshiyuki Sameshima¹ (Tokyo Univ.¹)

[28p-G5-9] Highly-Stacked Quantum Dot Intermixing by SiO₂ Sputtering and Annealing Technique

^○（M1）Asuka Matsushita¹, Atsushi Matsumoto¹, Kouichi Akahane², Yuichi Matsushima¹, Katsuyuki Utaka¹ (Waseda Univ.¹, National Inst. of Information and Communications Tech.²)

[28p-G5-10] Near-infrared luminescence properties of bismuth-doped silicon oxynitride thin films

^○Shohei Kitano¹, Satoshi Morimoto¹, Minoru Fujii¹, Hong-Tao Sun², Kenji Imakita¹, Jianrong Qui³, Shinji Hayashi¹ (Kobe Univ.¹, NIMS², Zhejiang Univ.³)

[28p-G5-11] △Near-infrared to visible luminescent colloidal Si nanocrystals

^○Hiroshi Sugimoto¹, Minoru Fujii¹, Kenji Imakita¹, Shinji Hayashi¹, Kensuke Akamatsu² (Kobe Univ.¹, Konan Univ.²)

[28p-G5-12] Silicon nanocrystals dispersible in water without surface functionalization

^○Yuki Fukuda¹, Hiroshi Sugimoto¹, Minoru Fuji¹, Kenji Imakita¹, Shinji Hayashi¹, Kensuke Akamatsu² (Kobe Univ.¹, Konan Univ.²)

[28p-G5-13] Optical properties of porous Si terminated by hydrophobic organic molecules

^○Kimihisa Matsumoto¹, Zyunichi Nigatake¹, Takashi Waridashi¹, Takashi Nomura¹, Kazuhide Kamiya¹ (Toyama Pref. Univ.¹)

[28p-G5-14] ▲Interlinked Ultraviolet and Blue Emissions in Oxidized Nano-silicon

^○Bernard Gelloz¹, Romain Mentek², Nobuyoshi Koshida² (Nagoya Univ.¹, Tokyo Univ. Agr.&Tech.²)

[28p-G5-15] Room temperature near-infrared (λ〜1.5μm) electroluminescence
from Si/CaF₂ quantum cascade laser structures

^○Minato Segawa¹, Tatsuya Ochi¹, Yuta Koshita¹, Masahiro Watanabe¹ (Tokyo Institute of Technology¹)

Session information

[28p-G5-1~15] 14.4 Optical properties and light-emitting devices