[28p-G6-1~17] 13.5 Si process technology

Thu. Mar 28, 2013 2:00 PM - 6:30 PM G6 (B5 1F-2106)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-G6-0] Lunch(75min)

[28p-G6-1] △Evaluation of stress induced by plasma assisted ALD SiN film

^○Masaya Nagasaka¹, Kouki Nagata^1,3, Takuya Yamaguchi¹, Atsushi Ogura¹, Hiroshi Oji², Jinyon Son², Ichirou Hirosawa², Yoshimasa Watanabe⁴, Yoshihiro Hirota⁴ (Meiji Univ.¹, JASRI², JSPS Research Fellow³, Tokyo Electron Ltd.⁴)

[28p-G6-2] Electrical Characterization of SiNx Films Deposited by Reactive RF Sputtering

^○Tatsuya Okada¹, Keisuke Yagi¹, Kimihiko Imura¹, Takashi Noguchi¹ (Univ. Ryukyus.¹)

[28p-G6-3] Investigation of hydrogen radical source on decomposition of chlorosilane source materials

^○Makoto Kubota^1,2, Naoki Ikeda^1,2, Hideomi Koinuma³, Takamasa Ishigaki², Masatomo Sumiya¹ (NIMS¹, Hosei Univ.², Tokyo Univ.³)

[28p-G6-4] Effect of surface treatment on Si before SiO₂ deposition by plasma-enhanced chemical vapor deposition

^○Tomohito Kawashima¹, Junji Kataoka¹, Hidehiko Yabuhara¹ (Corporate Manufacturing Engineering Center, Toshiba Corporation¹)

[28p-G6-5] Alternating feedstock supply in silica reduction process for solar grade silicon

^○Takuya Ogasawara¹, Kenji Itaka¹, Masayuki Kamimoto¹, Yasubumi Furuya¹, Hiroyuki Sato¹, Takuya Souma¹, Yohei Sato¹ (Hirosaki Univ.¹)

[28p-G6-6] Thin Si film deposition based on reducing effect of nanosilicon electron emitter

^○Ryutaro Suda¹, Mitsuki Ito¹, Akira Kojima¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (Tokyo Univ. Agr. & Tech.¹)

[28p-G6-7] Clarification of inducement mechanism of low electron barrier for a TiN/Ge contact

^○Keisuke Yamamoto^1,3, Masatoshi Mitsuhara², Minoru Nishida², Dong Wang², Hiroshi Nakashima¹ (Kyushu Univ. KASTEC¹, Kyushu Univ. I-EggS², JSPS research fellow³)

[28p-G6-8] Chemical Analysis of As⁺ Implanted Germanium -Implantation Temperature Dependence-

^○Takahiro Ono¹, Akio Ohta¹, Hiroaki Hanafusa¹, Hideki Murakami¹, Seiichiro Higashi¹, Seiichi Miyazaki² (Grad. School of AdSM, Hiroshima Univ.¹, Grad. School of Eng., Nagoya Univ.²)

[28p-G6-9] Dopant Distribution in Trench Polysilicon by Atom Probe Tomography

^○Fumiko Yano^1,2, Hisashi Takamizawa¹, Yasuo Shimizu¹, Kouji Inoue¹, Yasuyoshi Nagai¹, Yorinobu Kunimune³, Masao Inoue³, Akio Nishida³, Masahiro Ikeda³ (IMR Tohoku Univ.¹, Tokyo City Univ.², Renesas Electronics Corp.³)

[28p-G6-9.1] Break(15min)

[28p-G6-10] Solid phase crystallization of an amorphous Si film on a crystallization-induction layer by pulse laser irradiation

^○Kazuhide Mochizuki¹, Lien Mai¹, Susumu Horita¹ (JAIST¹)

[28p-G6-11] Leading Wave Crystallization of Amorphous Germanium Film Induced by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation

^○（M1）Takahiro Kamikura¹, Shohei Hayashi¹, Seiji Morisaki¹, Yuji Fujita¹, Muneki Akazawa¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

[28p-G6-12] Control of Crystalline Position Using a-Si strips and Slit Masks during High Speed Lateral Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation

^○Yuji Fujita¹, Shohei Hayashi¹, Seiji Morisaki¹, Takahiro Kamikura¹, Shogo Yamamoto¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

[28p-G6-13] Grain Growth Control Using Amorphous Silicon nm-wide-Strips during High Speed Lateral Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation

^○（B）Shogo Yamamoto¹, Yuji Fujita¹, Shohei Hayashi¹, Seiji Morisaki¹, Takahiro Kamikura¹, Muneki Akazawa¹, Hideki Murakami¹, Seiichiro Higashi¹ (Hiroshima Univ.¹)

[28p-G6-14] Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation to a-Si Strips and CMOS Circuit Operation at Supply Voltage of 5V

^○Seiji Morisaki¹, Shohei Hayashi¹, Yuji Fujita¹, Seiichiro Higashi¹ (Hiroshima univ.¹)

[28p-G6-15] △Double-Layered Polycrystalline Silicon Thin Films Crystallized by CO2 Laser Annealing for Three-Dimensional Integrated Devices

^○（DC）Koji Yamasaki¹, Emi Machida¹, Masahiro Horita^1,2, Yasuaki Ishikawa^1,2, Yukiharu Uraoka^1,2, Hiroshi Ikenoue³ (NAIST¹, CREST², Kyushu Univ.³)

[28p-G6-16] △Control of Si Lateral Growth Direction by Laser Spot’s Long Axis Inclinationes

^○（B）Ryota Morioka¹, Wenchang Yeh¹ (Shimanedai sougourikou¹)

[28p-G6-17] Transient Current Property of CeO_x/NiSi₂ Resistive Switching Devices

^○Shinichi Kano¹, Chunmeng Dou¹, Hadi Mokhammad¹, Kuniyuki Kakushima², Ahmet Parhat¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Takeo Hattori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Session information

[28p-G6-1~17] 13.5 Si process technology