[28p-G8-1~14] 13.2 Semiconductor surfaces

Thu. Mar 28, 2013 1:00 PM - 4:45 PM G8 (B5 2F-2202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-G8-1] Origin of pentagonal ring structures on Si(110) surfaces

^○Takahiro Yamasaki¹, Koichi Kato², Tsuyoshi Uda³, Takahisa Ohno^4,5 (FUJITSU Lab. Ltd.¹, Toshiba R&D center², ASMS³, NIMS⁴, IIS, Univ. Tokyo⁵)

[28p-G8-2] Atomistic Surface Morphology Transformation of Si(111) Surface during Native Oxidation

^○（M1）Syuhei Doi¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (University of Tsukuba¹)

[28p-G8-3] △Fabrication and analysis of sulfur-terminated Ge(111) surface

^○Yoshikazu Hanabusa¹, Hitoshi Suzuki¹, Takayuki Takahagi¹, Hiroyuki Sakaue¹ (Hiroshima Univ.¹)

[28p-G8-4] In Situ XPS Observation of GeO₂/Ge Structures under Controlled Relative Humidity: Dependence of Relative Humidity on Ge3d Spectra

^○Kenta Arima¹, Atsushi Mura¹, Iori Hideshima¹, Takuji Hosoi¹, Heiji Watanabe¹, Zhi Liu² (Osaka Univ.¹, Lawrence Berkeley Nat. Lab.²)

[28p-G8-5] Direct observation of Au nano-clusters and enhanced SiO2 growth due to catalytic action of Au and occurrence/annihilation of AC SPV

^○Hirofumi Shimizu¹, Senji Imamura¹, Yuji Sanada¹ (College of Eng., Nihon Univ.¹)

[28p-G8-6] ▲Investigation of Si surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering

^○Dae-Hee Han¹, Shun-ichiro Ohmi¹ (Tokyo Inst. of Tech.¹)

[28p-G8-7] Formation of Si random inverted-pyramids by photoetching with N-fluoropyridinium salts

^○Toshinori Hirano¹, Junichi Uchikoshi¹, Masaki Otani¹, Takabumi Nagai², Kenji Adachi², Kentaro Kawai¹, Kenta Arima¹, Mizuho Morita¹ (Osaka Univ.¹, Daikin Industries, Ltd.²)

[28p-G8-7.1] Break(15min)

[28p-G8-8] Behavior of Transition Metals Penetrating Silicon Substrate by Ion Implantation and Anneal

^○Keiji Ueno¹, Koichiro Saga², Shunsuke Kobayashi³, Koji Sueoka³ (Sony Semiconductor¹, Sony², Okayama Pref Univ.³)

[28p-G8-9] △First-principles analysis on diffusion mechanism of contamination metal atoms in β-₃N₄ crystals

^○Syunsuke Kobayashi¹, Daiki Shibata¹, Koji Sueoka¹, Jun Komachi², Koichiro Saga² (Okayama Pref. Univ.¹, Sony Corporation²)

[28p-G8-10] Molecular Dynamics Analysis on the Liquid Infiltration into Nanoscale Slit

^○Yasutaka Yamaguchi¹, Masayuki Kawakami², Daisaku Yano², Koji Yamanaka² (Osaka Univ.¹, Organo Corp.²)

[28p-G8-11] Mechanism of wet etching in nanoscale region

^○Atsushi Okuyama¹, Suguru Saito¹, Yoshiya Hagimoto², Hayato Iwamoto² (Sony Semiconductor¹, Sony²)

[28p-G8-12] △Study of the decomposition mechanism of the PMMA-type polymers by the hydrogen radical generated using Hot-wire catalyzer Ⅱ

^○Yusuke Noto¹, Yu Arai¹, Seiji Takahashi¹, Akihiko Kono¹, Kenji Ishikawa², Masaru Hori², Hideo Horibe¹ (Kanazawa Inst. Technol.¹, Nagoya Univ.²)

[28p-G8-13] △Study on reaction mechanism of polymer removal by wet ozone (4)

^○（DC）Yousuke Goto¹, Yukihiro Angata¹, Emi Tsukazaki¹, Seiji Takahashi¹, Kunihiko Koike², Tadaaki Yamagishi³, Hideo Horibe¹ (Kanazawa Inst. of Technol.¹, Iwatani Corp.², Kanazawa Univ.³)

[28p-G8-14] Removal efficiency with actual chemical for wafer cleaning process

^○Masatoshi Hashimoto¹, Shuichi Tsuzuki¹ (Nihon Pall Ltd¹)

Session information

[28p-G8-1~14] 13.2 Semiconductor surfaces