Session information

Regular sessions(Poster presentation)

15. Crystal Engineering » 15.8 Crystal evaluation, nanoimpurities and crystal defects

[28p-PA3-1~5] 15.8 Crystal evaluation, nanoimpurities and crystal defects

Thu. Mar 28, 2013 1:30 PM - 3:30 PM PA3 (1st gymnasium)

Poster Session 13:30〜15:30(PA)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

[28p-PA3-1] Molecular dynamics calculation on formation of void defects in Si and Ge crystals.

^○（M1）Shusaku Ota¹, Koji Sueoka¹ (Okayama prefectural univ.¹)

[28p-PA3-2] In-plane distribution of trap in n-type 4H-SiC studied by Schottky probe using Ag/nano-Ag mixture paste

^○Honda Unhi¹, Souda Yoshinori¹, Furukawa Hiroyuki¹, Tokuda Yutaka¹, Ito Jyoji², Sakane Hitoshi² (Aichi Inst. of Technol.¹, S. H. I. Examination & Inspection, Ltd.²)

[28p-PA3-3] Reduction of the dislocation density of GaN substrates by double pulse laser annealing (DPLA)

^○Mariko Fujieda¹, Takamasa Ishii¹, Takeaki Sakurai¹, Takashi Sekiguchi², Katsuhiro Akimoto¹ (Univ.of Tsukuba¹, NIMS²)

[28p-PA3-4] The evaluation of lattice displacement in hydrogen-ion implanted ZnO bulk single crystals by Rutherford backscattering spectrometry

^○（B）Takuya Kaida¹, Kazuma Kamioka¹, Takahiro Ida¹, Kazuo Kuriyama¹, Kazumasa Kushida² (Hosei Univ.¹, Osaka kyouiku Univ.²)

[28p-PA3-5] Electron spin resonance measurement of sapphire for KAGRA mirrors

^○（M1）Nobuhiro Fukumoto¹, Yukinori Ono², Masahiro Hori², Shigenori Moriwaki¹, Norikatsu Mio¹ (Univ. of Tokyo¹, Univ. of Toyama²)

▲