[28p-PB3-1~15] 6.2 Carbon-based thin films

Thu. Mar 28, 2013 4:00 PM - 6:00 PM PB3 (2nd gymnasium)

Poster Session 16:00〜18:00(PB)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[28p-PB3-1] X-Ray Photoelectron Diffraction Study of the Surface Atomic Arrangements of Ib-HTHP (001) Substrates and CVD Diamonds Grown on the Ib Substrates

^○Shozo Kono¹, Hideyuki Kodama¹, Kimiyoshi Ichikawa¹, Taro Yoshikawa¹, Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹)

[28p-PB3-2] △Synchrotron Light X-ray Topography Observation of HPHT Single Crystal Diamond

^○（BC）Ryuichi Murakami¹, Makoto Kasu¹, Hitoshi Sumiya² (Dept. Electrical Electronic Engineering, Green Electronics Labs. Saga Univ.¹, Sumitomo Electric Industries, LTD.²)

[28p-PB3-3] ▲Single crystal diamond mechanical resonators

^○Meiyong Liao¹, Masaya Toda², Liwen Sang¹, Masataka Imura¹, Naoki Ikeda¹, Yasuo Koide¹ (National Institute for Materials Science¹, Tohoku University²)

[28p-PB3-4] Structure optimization of p-i-p diamond FET fabricated with MWPCVD process

^○（M1）Hikaru Hayakawa¹, Osamu Maida¹, Toshimichi Ito¹ (Osaka Univ.¹)

[28p-PB3-5] Variation of Electrochemical Property of Heavily-Boron-Doped CVD Diamond Layers with their Crystalline Quality

^○Yusuke Mizobata¹, Reona Mori¹, Osamu Maida¹, Toshimichi Ito¹ (Graduate School of Eng., Osaka Univ.¹)

[28p-PB3-6] Reduce in effective activation energy of doped boron acceptors by separating and isolating heavily doped degenerate p-type diamond layers

^○Daichi Ichikawa¹, Osamu Maida¹, Toshimichi Ito¹ (Osaka Univ.¹)

[28p-PB3-7] Fabrication of Amorphous Carbon Film by RF Plasma CVD Method from CO Gas

^○Yuki Yasuoka¹, Toru Harigai¹, Koyo Iwasa¹, Hiroshi Furuta^1,2, Akimitsu Hatta^1,2 (Kochi Univ. Technol.¹, Inst. Nanotechnol., Kochi Univ. Technol.²)

[28p-PB3-8] △Deposition of amorphous carbon films from isotopic methane gases

^○Yutaro Suzuki¹, Tsuneo Suzuki², Naoto Ohtake¹, Hiroki Akasaka¹ (Tokyo Inst. of Tech.¹, Nagaoka Univ. of Tech.²)

[28p-PB3-9] Morphological change of carbon film surface through thermal annealing

^○Yun Jeong Choi¹, Takuro Tomita^1,2, Yoshiki Naoi^1,2 (ATS¹, STS²)

[28p-PB3-10] Characterization of Carbon Thin Films Fabricated by Low-energy Electron Beam Irradiation on C2H2 Solid Films Condensed at Cryogenic Temperature

^○Naoki Kobayashi¹, Ryutaro Yamada¹, Tetsuya Sato¹, Kiyokazu Nakagawa¹ (Yamanashi Univ.¹)

[28p-PB3-11] Time-resolved emission spectra of carbon nitride thin films generated by laser irradiation

^○Masaki Satake¹, Michihito Teramoto², Jyunji Sawahata², Kunio Itoh², Kenta Kametomo³, Ken-ichi Takarabe³, Kazutoshi Fukui⁴, Shin-ichi Yamamoto¹ (Ryukoku Univ.¹, Tsuyama Nat. College of Tech.², Okayama Univ. of Sci.³, Univ. of Fukui⁴)

[28p-PB3-12] Mechanism of Film hardening of Amorphous Silicon Carbide Films

^○Haruhiko Ito¹, Takeshi Ohgaki¹, Hiroki Akasaka^1,2, Hidetoshi Saitoh¹ (Nagaoka Univ. of Tech.¹, Tokyo Instit. of Tech.²)

[28p-PB3-13] Formation of graphene and development of patterning method by the electron irradiation applied to the fullerene

^○Seiya Matsukawa¹, Kyouta Matsuo², Tmoki Imamura², Hiroshi Kubota¹ (Graduate School of Science and Technology Kumamoto University¹, Kumamoto University²)

[28p-PB3-14] Alcohol CVD growth of graphene using patterned Ni catalyst

^○（M1）Yusuke Kito¹ (Meijo University¹)

[28p-PB3-15] Graphene Flowers and Graphene Tubes Material for Applications Such as Transparent Conductive Films as an Alternative to ITO

^○Hiroaki Taguchi¹, Kazuo Muramatsu², Hideki Yoshioka³, Shinichi Yamamoto¹ (Ryukoku Univ.¹, Incubation Alliance Inc.², Hyogo Pref. Inst. of Tech.³)

Session information

[28p-PB3-1~15] 6.2 Carbon-based thin films