○Akiko Ide1, Ayako Nagano1, Minoru Oshima1, Kenji Yoshino1,3, Yujin Takemoto2, Koji Toyota2, Koichro Inaba2, Ken-ichi Haga2, Toshio Naka2, Kohichi Tokudome2 (Univ. Miyazaki1, Tosoh Finechem2, JST-CREST3)
Session information
Regular sessions(Oral presentation)
21. Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
[29a-G19-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Fri. Mar 29, 2013 10:00 AM - 12:45 PM G19 (B5 4F-2403)
△:Young Scientist Oral Presentation Award Applied
▲:English Presentation
▼:Both Award Applied and English Presentation
○Hiroki Shimomura1, Hideki Yoshioka2, Shinichi Yamamoto1 (Ryukoku Univ.1, Hyogo Pref. Inst. of Tech.2)
○Housei Akazawa1 (NTT MI Labs.1)
Takuya Matsumoto1, ○Koji Abe1 (Nagoya Institute of Technology1)
○Masaki Tanaka1,2, Kenji Yoshino2,3 (Ube Material1, Miyazaki Univ.2, JST-CREST3)
○Hisao Makino1, Huaping Song1, Tetsuya Yamamoto1, Masaaki Kobata1, Keisuke Kobayashi1 (Research Inst., Kochi Univ. of Tech.1)
○Tetsuya Yamamoto1, Huaping Song1, Hisao Makino1, Minoru Osada2, Seiichi Kishimoto1,3 (Researcch Inst. Kochi Univ. Tech.1, NIMS, MANA2, Kochi Nat. Col. Tech.3)
○(M1)Go Kageyama1, Hideki Yoshioka2, Shin-ichi Yamamoto1 (Ryukoku Univ.1, Hyogo Pref. Inst. of Tech.2)
○Makoto Ohtsuka1,2, Takashi Nakamura1,2 (IMRAM, Tohoku Univ.1, NICHe, Tohoku Univ.2)
○Hiroshi Yanagi1, Chiyuki Sato1, Nobuhito Takagi1, Issei Suzuki2, Takahisa Omata2, Toshio Kamiya3, Hideo Hosono3,4 (Univ. Yamanashi1, Osaka Univ.2, Tokyo Tech. MSL3, Tokyo Tech. FRC4)