Session information

Regular sessions(Poster presentation)

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[29a-PB7-1~21] 15.3 III-V-group epitaxial crystals

Fri. Mar 29, 2013 9:30 AM - 11:30 AM PB7 (2nd gymnasium)

Poster Session 9:30〜11:30(PB)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29a-PB7-1] Long wavelength luminescence of InAs/InP double-cap QDs by increasing InAs supplied rate

^○Yuta Yamamoto¹, Yuto Iwane¹, Masayuki Yamauchi¹, Shohei Yoshikawa¹, Kazuhiko Shimomura¹ (Sophia University¹)

[29a-PB7-2] Extended emission wavelength of bilayer InAs-QDs on a GaAs substrate (II)

^○（M1）Yohei Nakatani¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Yoshimasa Sugimoto³, Edmund Clark⁴, Richard Hogg⁴ (Wakayama Univ.¹, NEC Corp.², NIMS³, U. Sheffield⁴)

[29a-PB7-3] The growth of Ga0.2In0.8As QDs on direct wafer bonded InP-to-silicon substrate

^○（M1）xinxin zhang¹, Keiichi Matsumoto¹, Yoshinori Kaneya¹, Kazuhiko Shimomura¹ (sophia univ.¹)

[29a-PB7-4] DLTS characterization of In(Ga)As-quantum dots using Bi as a surfactant

Souichiro Suzuki¹, ^○Hiroshi Okamoto¹, Kouta Tateno², Takehiko Tawara², Hideki Gotoh², Tetsuomi Sougawa² (Hirosaki Univ.¹, NTT Basic Res. Labs.²)

[29a-PB7-5] Effect of spacer layer thickness in multiple stack high density InGaAsN/GaP quantum dots

^○Noriyuki Urakami¹, Hironari Ito¹, Hiroto Sekiguchi¹, Hiroshi Okada^2,1, Akihiro Wakahara¹ (Toyohashi Tech¹, Toyohashi Tech. EIIRIS²)

[29a-PB7-6] PL properties dependent on the height of GaAs nanodisks fabricated by neutral beam etching

^○Toshiyuki Kaizu^1,5, Yosuke Tamura^3,5, Makoto Igarashi^3,5, Thomas Cedric^3,5, Hu Weiguo^3,5, Seiji Samukawa^3,4,5, Yoshitaka Okada^2,5 (Faculty of Eng., Kobe Univ.¹, RCAST, The Univ. of Tokyo², IFS, Tohoku Univ.³, WPI-AIMR, Tohoku Univ.⁴, JST-CREST⁵)

[29a-PB7-7] △Self-formation of ultrahigh density InAs quantum dots (10¹² cm^-2) on InAsSb layers

^○Takuya Sano¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

[29a-PB7-8] AFM observation of rim structures on the low-density InAs QDs

^○Naoto Kumagai^1,2, Shunsuke Ohkouchi², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (IIS, The Univ. of Tokyo¹, NanoQuine, The Univ. of Tokyo²)

[29a-PB7-9] in-situ observation of 2D InAs island growth on GaAs(001) by STMBE

^○Takashi Toujyou¹, Teruki Teraoka¹, Shiro Tsukamoto¹ (Anan National College of Technology¹)

[29a-PB7-10] Molecular Beam epitaxial Growth of GaAs Nanowires and Effect of Various Growth Interrption on Si(111) substrate

^○Namsoo Aｈｎ¹, Yoshiaki Araki¹, Hideaki Hibi¹, Fumitaro Ishikawa¹, Masahito Yamaguchi² (Osaka Univ.¹, Nagoya Univ.²)

[29a-PB7-11] VLS growth of InAs nanowires by MOVPE

^○Masayuki Yamauchi¹, Shin Murakami¹, Keiichi Matsumoto¹, Hiroaki Funayama¹, Kazuhiko Shimomura¹, Takao Waho¹ (Sophia University¹)

[29a-PB7-12] The growth of GaN nanocolumn regular arrays on AlN/Si substrate by RF-MBE

^○Taiichiro Ozaki^1,2, Isamau Matsuyama^1,2, Ai Mizuno^1,2, Katsumi Kishino^1,2 (Sophia university¹, Sophia Nanotech. Research Center²)

[29a-PB7-13] Easy patterning of graphene mask and its application to selective growth of GaAs

^○（M1）Yujiro Hirota¹, Yuya Shirai¹, Hiromu Iha¹, Takenori Iwatsuki¹, Hironao Kato¹, Nao Yamamoto¹, Shigeya Naritsuka¹, Takahiro Maruyama¹ (Meijo Univ.¹)

[29a-PB7-14] MOVPE growth of GaInAs/InP layers on directly-bonded InP/glass substrate

^○（M2）keiichi Matsumoto¹, Kinkin Zhang¹, Yoshinori Kanaya¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

[29a-PB7-15] Proposal of optimizing method of InGaAs metamorphic buffer for laser diode using real time curvature measurement

^○Ryo Nakao¹, Masakazu Arai¹, Ryuzo Iga¹, Masaki Kohtoku¹ (NTT Photonics Laboratories¹)

[29a-PB7-16] Defect analyses of compositionally graded InGaAs layers by transmission electron microscopy

^○Takuo Sasaki¹, Toshiaki Nishi¹, Masamitu Takahasi², Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (Toyota Tech. Inst.¹, JAEA²)

[29a-PB7-17] Effects of the post growth annealing on the electronic properties of impurity doped InGaAsN films

^○Kenjiro Uesugi¹, Shigeyuki Kuboya¹, Sanorpim Sakuntam², Kentaro Onabe¹ (Dept. of Adv. Mat. Sci., The Univ. of Tokyo¹, Chulalongkorn Univ.²)

[29a-PB7-18] Incorporation processes of residual impurities during GaAsN growth by atomic layer epitaxy

^○Hidetoshi Suzuki¹, Toshihiro Yamauchi¹, Tomohiro Haraguchi², Koji Maeda², Masashi Ozeki², Tetsuo Ikari² (IRO, Univ. of Miyazaki¹, Faculty of Eng. Univ. of Miyazaki²)

[29a-PB7-19] Optical Absorption by E₊ band in Nitrogen Delta-Doped GaAs Superlattices for Intermediate Band Solar Cells

^○Shunsuke Noguchi¹, Shuhei Yagi¹, Yasuto Hijikata¹, Shigeyuki Kuboya², Yoshitaka Okada³, Kentaro Onabe², Hiroyuki Yaguchi¹ (Saitama Univ.¹, Dept. of Adv.Mat. Sci., The Univ. of Tokyo², RCAST, The Univ. of Tokyo³)

[29a-PB7-20] First-principles calculation of the electronic structure of GaPN alloys

^○Makoto Saito¹, Kei Sakamoto², Hiroyuki Yaguchi² (Saitama Univ.¹, Saitama Univ.²)

[29a-PB7-21] CuPt-type ordering in spatially inverted AlGaAs grown by molecular beam epitaxy

^○Naoki Awata¹, Koji Amazutsumi¹, Tomonori Matsushita¹, Takashi Kondo¹ (Univ. of Tokyo¹)

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