Regular sessions(Oral presentation)

16. Amorphous and Microcrystalline Materials » 16.2 Processing technologies and devices

[29p-A3-1~6] 16.2 Processing technologies and devices

Fri. Mar 29, 2013 1:30 PM - 3:00 PM A3 (K1 2F-201)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29p-A3-0] Lunch(90min)

[29p-A3-1] Low-Temperature Growth of Ge in a-Ge/Sn Stacked-Structures on Insulator

^○Akira Ooato¹, Tsuneharu Suzuki¹, Jonghyeok Park^1,2, Masanobu Miyao¹, Taizoh Sadoh¹ (Kyushu Univ.¹, JSPS Research Fellow²)

[29p-A3-2] Influences of amorphous precursors for solid phase crystal growth of germanium on crystalline silicon (2)

^○Yuji Kojima¹, Mikuri Kanai², Tomoaki Yamaguchi², Masao Isomura¹ (Tokai Univ. Dept. Engineering¹, Tokai Univ. Graduate School of Engineering²)

[29p-A3-3] Crystallization of Amorphous Ge Films by Flash Lamp Annealing

^○Keisuke Ohdaira^1,2, Hideki Matsumura¹ (JAIST¹, JST PRESTO²)

[29p-A3-4] Property Distribution of Solution-Processed a-Si:H Films along thickness direction

^○（M1）Yoo Sakuma¹, Keisuke Ohdaira^1,2, Takashi Masuda^1,3, Zhongrong Shen^1,2, Hideyuki Takagishi^1,2, Lam Pham^1,2, Tatsuya Shimoda^1,2,3 (JAIST¹, JST-ALCA², JST-ERATO³)

[29p-A3-5] Formation of a hydrogenated amorphous silicon film by a slit-coating method

^○Hideyuki Takagishi^1,3, Yasuo Matsuki^2,4, Takashi Masuda^1,4, Zhongrong Shen^1,3, Lam Pham Tien^1,3, Keisuke Ohdaira^1,3, Tatsuya Shimoda^1,3,4 (JAIST¹, JSR², JST ALCA³, JST ERATO⁴)

[29p-A3-6] Control of Growth Process for Low Dangling-Bond Defect Density in a-SiO:H

^○Yasushi Sobajima^1,2, Shinnosuke Kakimoto¹, Ryoji Okumoto¹, Chitose Sada^1,2, Akihisa Matsuda^1,2, Hiroaki Okamoto^1,2 (Grad. School of Eng. Sci., Osaka Univ.¹, JST-CREST²)