[29p-G21-1~21] 15.4 III-V-group nitride crystals

Fri. Mar 29, 2013 1:00 PM - 7:00 PM G21 (B5 4F-2405)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29p-G21-0] Lunch(60min)

[29p-G21-1] Investigation and Applications of Ordering and Disordering in III-V Semiconductors

^○Akio Sasaki^1,2 (Kyoto University¹, Osaka Electro-Communication University²)

[29p-G21-2] Time-resolved cathodoluminescence studies on Si-doped Al_0.6Ga_0.4N epilayers

^○Kouji Hazu¹, Youichi Ishikawa¹, Masanori Tashiro¹, Kentaro Furusawa¹, Hideto Miyake², Kazumasa Hiramatsu², Akira Uedono³, Shigefusa Chichibu¹ (IMRAM-Tohoku Univ.¹, Mie Univ.², Univ. Tsukuba³)

[29p-G21-3] Origin of Exciton Localization in Al-rich AlGaN/AlN Quantum Wells

^○（DC）Takao Oto¹, Ryan Banal¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

[29p-G21-4] △PL Mappings of Al-rich AlGaN/AlN Quantum Wells by Confocal Microscopy

^○Yoshiya Iwata¹, Akio Kaneta¹, Ryan Banal², Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹, NTT Labs.²)

[29p-G21-5] ▼Improved Emission Properties of AlGaN Quantum Wells by Non-polar Plane

^○Ryan Banal¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (NTT BRL¹)

[29p-G21-6] The origin of an anomalous peak in photoluminescence spectra of AlN

^○Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

[29p-G21-7] Raman scattering characterization of phonons in In-rich In_xAl_1-xN films grown by MBE

^○（M1）Takashi Koike¹, JungGon Kim¹, Shin-ichi Nakanishi¹, Noriyuki Hasuike¹, kenji kisoda², Hiroshi Harima¹, kenji kodama³, Akihiro Hashimoto³, Akio Yamamoto³ (Kyoto Inst. Technology¹, Wakayama Univ.², Univ. of Fukui³)

[29p-G21-7.1] Break(15min)

[29p-G21-8] Crystal growth of Connected-Pillar AlN structure for buffer layer of Deep-UV LEDs

^○Shiro Toyoda^1,2, Yuji Tomita^1,2, Sachie Fujikawa², Norihiko Kamata^1,2, Hideki Hirayama^1,2 (RIKEN¹, Saitama Univ.²)

[29p-G21-9] Development of High-Efficiency Deep-UV LEDs using Connected-Pillar AlN Buffer

^○Yuji Tomita^1,2, Shiro Toyoda^1,2, Sachie Fujikawa², Norihiko Kamata¹, Hideki Hirayama^1,2 (Saitama Univ.¹, RIKEN²)

[29p-G21-10] △Improvement of the light extraction efficiency in 350-nm-emission UV-LED

^○（M1）Tsubasa Nakashima¹, Kenitirou Takeda¹, Hiroshi Shinzato¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,3, Hiroshi Amano^2,3 (Meijo Univ.¹, Nagoya Univ.², Nagoya Univ. ARC³)

[29p-G21-11] △Improvement of light extraction efficiency of nitride-based LEDs with moth-eye patterned sapphire substrate

^○（M1）Takayoshi Tsuchiya¹, Shinya Umeda¹, Mihoko Sowa¹, Shunsuke Kawai¹, Toshiyuki Kondo², Tsukasa Kitano², Midori Mori², Atsushi Suzuki², Isamu Akasaki^1,4, Hitoshi Sekine³, Koichi Naniwae², Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹ (Fac. Sci. & Technol. , Meijo Univ¹, EL-SEED², DIC³, Akasaki Research Center⁴)

[29p-G21-12] △Direct evidence of electron overflow by additional active region on electron-blocking layer

^○（B）Kento Hayashi¹, Kenjo Matsui¹, Takatoshi Morita¹, Tomoyuki Suzuki¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research Center.,Nagoya Univ²)

[29p-G21-13] △Ambient gas dependence on lateral p-type activation

^○（M1）Yuka Kuwano¹, Mitsuru Kaga¹, Takatoshi Morita¹, Koji Yamashita¹, Daichi Minamikawa¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, isamu Akasaki^1,2 (Fac. Sci. & Technol., Meijo Univ.¹, Akasaki Inst., Nagoya Univ.²)

[29p-G21-14] Efficiency Improvement of InGaN based Light-Emitting Diodes

^○Haziq Muhammad¹, Yutaro Hirota¹, Seita Miyoshi¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ. Grad. School of Sci. & Eng.¹)

[29p-G21-15] △Characteristics of LED grown on semipolar {11-22} InGaN underlayer as a function of the underlayer thickness

^○Kota Nakao¹, Seita Miyoshi¹, Katsumi Uchida¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Grad. School of Sci. & Eng., Yamaguchi Univ.¹)

[29p-G21-15.1] Break(15min)

[29p-G21-16] △Stability of emission intensity ratio in nitride-based two-wavelength light emitting diodes

^○Kenjo Matsui¹, Koji Yamashita¹, Mitsuru Kaga¹, Takatoshi Morita¹, Tomoyuki Suzuki¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Fac. Sci. & Technol., Meijo Univ.¹, Akasaki Research Center., Nagoya Univ.²)

[29p-G21-17] Improvement of light output of red LED with Mg and Eu codoped GaN active layer

^○Ryota Matsumura¹, Tatuki Otani¹, Hiroto Sekiguchi¹, Yasuhumi Takagi², Hirosi Okada¹, Akihiro Wakahara¹ (Toyohashi Univ. Tech.¹, Hamamatsu Photonics K. K.²)

[29p-G21-18] High-efficiency green-yellow light-emitting diodes grown on (0001) sapphire substrate

^○Jongil Hwang¹, Rei Hashimoto¹, Shinji Saito¹, Shinya Nunoue¹ (Toshiba R&D center¹)

[29p-G21-19] Fabrication of very thin GaN-based devices by MeTRe method

^○Masanobu Hiroki¹, Kazuhide Kumakura¹, Yasuyuki Kobayashi¹, Tetsuya Akasaka¹, Hideki Yamamoto¹, Toshiki Makimoto¹ (NTT Basic Research Labs.¹)

[29p-G21-20] High-optical-confinement LDs using AlInN/GaN lattice-matched heterostructures

^○Yoshitaka Taniyasu^{1, 2}, Jean-François Carlin², Antonino Castiglia², Raphaël Butté², Nicolas Grandjean² (NTT BRL¹, EPFL²)

[29p-G21-21] Optical Output Properties of Nitride-based Light-Emitting Transistors

^○Kazuhide Kumakura¹, Hideki Yamamoto¹, Toshiki Makimoto¹ (NTT Basic Research Labs.¹)

Session information

[29p-G21-1~21] 15.4 III-V-group nitride crystals