[29p-G9-1~7] 13.6 Silicon devices / Integration technology

Fri. Mar 29, 2013 2:00 PM - 3:45 PM G9 (B5 2F-2203)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29p-G9-0] Lunch(75min)

[29p-G9-1] Enhancement of phononless optical transition by large valley splitting in silicon

^○Jinichiro Noborisaka¹, Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (NTT BRL¹)

[29p-G9-2] Integration of CMOS Analog Selector Circuts and Single-Electron Transistors Operating at Room temperature

^○Ryota Suzuki¹, Motoki Nozue¹, Takuya Saraya¹, Toshiro Hiramoto¹ (IIS, Univ. of Tokyo¹)

[29p-G9-3] Gate voltage dependence on excited states of Si single-electron transistor

^○Isamu Yoshioka¹, Hiroto Takenaka¹, Takafumi Uchida¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (IST,Hokkaido Univ.¹, NTT Basic Research Labs.²)

[29p-G9-4] Accuracy evaluation of Si single-electron transfer devices at ultralow temperatures

^○Gento Yamahata¹, Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (NTT Basic Research Labs.¹)

[29p-G9-5] Characteristics of double quantum dot Si single-electron transistor caused by the number change of electrons in quantum dot

^○Takafumi Uchida¹, Hiroto Takenaka¹, Isamu Yoshioka¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (IST. Hokkaido Univ.¹, NTT Basic Research Labs.²)

[29p-G9-6] △Observation of few-electrons in a silicon double quantum dot by a charge detector

^○Kosuke Horibe¹, Tetsuo Kodera^1,2,3, Tomohiro Kambara¹, Yukio Kawano⁴, Shunri Oda¹ (QNERC, Tokyo Tech.¹, NanoQuine, the Univ. of Tokyo², PRESTO-JST³, Dept. of Phys. Elec., Tokyo Tech.⁴)

[29p-G9-7] Electron transport characteristic of silicon triple quantum dot making a triangle

^○Raisei Mizokuchi¹, Tetsuo Kodera^1,2,3, Kosuke Horibe¹, Yukio Kawano¹, Shunri Oda¹ (QNERC, Tokyo Tech.¹, NanoQuine, the Univ. of Tokyo², PRESTO-JST³)

Session information

[29p-G9-1~7] 13.6 Silicon devices / Integration technology