[30p-G21-1~7] 15.4 III-V-group nitride crystals

Sat. Mar 30, 2013 1:15 PM - 3:00 PM G21 (B5 4F-2405)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[30p-G21-0] Lunch(75min)

[30p-G21-1] Monolithic integration of nanocolumn LEDs with different Emission Colors

^○Ai Yanagihara¹, Kyoichi Ikeda¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotech. Research Center²)

[30p-G21-2] Dependence of light output power of InGaN based light-emitting diodes on column-height of nano-sized patterned sapphire substrate

^○Takuya Egami¹, Seita Miyoshi¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Tomoyasu Nishimiya², Mitihiro Hiramoto², Shinichi Motoyama² (Grad. School of Sci. & Eng., Yamaguchi Univ.¹, SAMCO inc.²)

[30p-G21-3] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by HVPE employing a front-excitation photoelectron gun

^○Youichi Ishikawa¹, Kentaro Furusawa¹, Masanori Tashiro¹, Kouji Hazu¹, Satoru Nagao², Hirotaka Ikeda², Kenji Fujito², Shigefusa Chichibu¹ (IMRAM Tohoku Univ.¹, Mitsubishi Chemical Corp.²)

[30p-G21-4] △Observation of in-plane carrier motion in an InGaN/GaN quantum well

^○（M1）Kyohei Nishikawa¹, Akio Kaneta¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

[30p-G21-5] △Carriers recombination dynamics in InGaN/GaN quantum wells studied by microscopic photoluminescence under de-excitation source

^○Yuuya Tanaka¹, Akio Kaneta¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

[30p-G21-6] △Carreir dynamics of the non-radiative recombination in InGaN/GaN SQW

^○Kouhei Inoue¹, Akio Kaneta¹, Mitsuru Funato¹, Yoiti Kawakami¹, Koiti Okamoto² (Kyoto. Univ.¹, Kyushu. Univ.²)

[30p-G21-7] △Well width dependence of exciton dynamics in semipolar (1122) InGaN/GaN quantum wells

^○Takuya Ozaki¹, Junichi Nishinaka¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

Session information

[30p-G21-1~7] 15.4 III-V-group nitride crystals