Regular sessions(Poster presentation)

[29a-PB6-1~13] 14.2 Ultrathin films and quantum nanostructures

Fri. Mar 29, 2013 9:30 AM - 11:30 AM PB6 (2nd gymnasium)

Poster Session 9:30〜11:30(PB)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29a-PB6-1] ▲Design of SiO2/a-Si micropillar cavities for 1.55-μm-band quantum-dot single-photon sources

^○Haizhi Song¹, Kazuya Takemoto¹, Toshiyuki Miyazawa², Motomu Takatsu¹, Satoshi Iwamoto^1,3, Tsuyoshi Yamamoto², Yasuhiko Arakawa^1,3 (NanoQuine,Univ. of Tokyo¹, Fujitsu Labs.², IIS, Univ. of Tokyo³)

[29a-PB6-2] Optical properties of single quantum dot under suppressed spontaneous emission condition by photonic bandgap

^○（D）Takanori Kojima¹, Kazunobu Kojima¹, Takashi Asano¹, Susumu Noda¹ (Kyoto Univ.¹)

[29a-PB6-3] Polymeric photonic dot for control of photon emission from quantum dot

^○Kishou Takahata¹, Kohki Mukai¹, Seisuke Nakashima^1,2 (Yokohama National Univ.¹, RIKEN²)

[29a-PB6-4] Two wavelength emission laser with semiconductor quantum dot

^○Kouichi Akahane¹, Naokatsu Yamamoto¹, Atsushi Kanno¹, Keizo Inagaki¹, Toshimasa Umezawa¹, Tetsuya Kawanishi¹, Takeshi Endo², Yasunori Tomomatsu², Toshio Yamanoi² (NICT¹, Koshin Kogaku²)

[29a-PB6-5] Time-resolved PL properties of in-plane ultrahigh density InAs quantum-dots

^○Miyuki Shiokawa¹, Edes Saputra¹, Koichi Yamaguchi¹ (Univ. of Electro-Communications¹)

[29a-PB6-6] Fabrication of GaN/AlN Resonant Tunneling Diode Using MOVPE

^○Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (AIST¹)

[29a-PB6-7] Fabrication of resistance switching devices using Si/CaF₂ resonant tunneling structures grown on Si(111)

^○Yuuya Kuwata¹, Kazuya Uryu¹, Junya Denda¹, Keita Suda¹, Masahiro Watanabe¹ (Tokyo Institute of Technology¹)

[29a-PB6-8] Retention characteristics of crosspoint resistance switching devices using CaF₂/CdF₂/Si quantum-well structures grown on CoSi₂/Si(100)

^○Kazuya Uryu¹, Junya Denda¹, Keita Suda¹, Yuya Kuwata¹, Masahiro Watanabe¹ (Tokyo Tech¹)

[29a-PB6-9] Resistance switching characteristics of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures

^○junya denda¹, kazuya uryu¹, keita suda¹, masahiro watanabe¹ (Tokyo Inst. of Technology¹)

[29a-PB6-10] Study of layered structures for fluoride RTDs grown on Ge substrates

^○Satoru Namba¹, Keita Takahashi¹, Yuji Hayashi¹, Tsuyoshi Takahashi¹, Kazuo Tsutsui¹ (Tokyo Tech.¹)

[29a-PB6-11] Fluoride resonant tunneling structures with low leakage current by introducing a SrF₂ layer

Yuji Hayashi¹, ^○Keita Takahashi¹, Tsuyoshi Takahashi¹, Kazuo Tsutsui¹ (Tokyo Tech.¹)

[29a-PB6-12] Conduction band structure of stacked InGaAs/AlAs/InAlAs coupled double quantum wells

^○Shin-ichiro Gozu¹, Teruo Mozume¹, Haruhiko Kuwatsuka¹, Hiroshi Ishikawa¹ (AIST¹)

[29a-PB6-13] Characterization of Electron Spin Transport in δ-Dope InAs/InP Core Shell Nanowire

^○Zhixin Cui¹, Jabeen Fauzia², Harmand Jean-christophe², Kanji Yoh¹ (Hokkaido University¹, bCNRS-Laboratoire de Photonique et de Nanostructures²)

Regular sessions(Oral presentation)

[30a-G20-1~15] 14.2 Ultrathin films and quantum nanostructures

Sat. Mar 30, 2013 9:00 AM - 1:00 PM G20 (B5 4F-2404)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[30a-G20-1] Phononic waveguide incorporating electromechanical membrane resonators

^○Daiki Hatanaka¹, Imran Mahboob¹, Koji Onomitsu¹, Hiroshi Yamaguchi¹ (NTT Basic Research Laboratories¹)

[30a-G20-2] Strong parametric coupling between GaAs micromechanical resonators

^○Hajime Okamoto¹, Ahmet Taspinar¹, Imran Mahboob¹, Hiroshi Yamaguchi¹ (NTT Basic Research Labs.¹)

[30a-G20-3] Dynamics of Hole-Spin Superposition in GaAs Quantum Well

^○Tetsu Ito¹, Hideki Gotoh², Masao Ichida³, Hiroaki Ando³ (GRL Shizuoka Univ.¹, NTT BRL², Grad. Sch. of Nat. Sci. Konan Univ.³)

[30a-G20-4] Photoreflectance of InGaAs coupled quantum wells

^○Keita Imai¹, Tosio Kastuyama¹, Shin-ichiro Gozu², Teruo Mozume² (Fukui Univ.¹, AIST²)

[30a-G20-5] ▼Silicon Nanodisk Intermediate Band Solar Cell

^○Weiguo Hu^1,2, Makoto Igarashi^1,2, Mohd Erman Fauzi^1,2, Akio Higo⁴, Ming-Yi Lee³, Yiming Li^3,4, Seiji Samukawa^1,2,4 (IFS, Tohoku Univ.¹, JST-CREST², National Chiao Tung Univ.³, WPI-AIMR, Tohoku Univ.⁴)

[30a-G20-6] Ar:Cl₂ mixture ratio study on Neutral Beam etching of GaAs

^○Cédric Thomas^1,3, Yosuke Tamura^1,3, Makoto Igarashi^1,3, Mohd Erman Fauzi^1,3, Akio Higo², Weiguo Hu^1,3, Tomohiro Kubota¹, Seiji Samukawa^1,2,3 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², JST-CREST³)

[30a-G20-7] △Diameter Controlled GaAs Nanodisk Fabrication by Bio-template and Neutral Beam Etching and Its Optical Emissions

^○Yosuke Tamura^1,2, Makoto Igarashi^1,2, Cédric Thomas^1,2, Mohd Erman Fauzi^1,2, Weiguo Hu^1,2, Akio Higo³, Rikako Tsukamoto^1,2, Toshiyuki Kaizu^2,4, Takuya Hoshii^2,5, Takayuki Kiba^2,6, Ichiro Yamashita^2,7, Yoshitaka Okada^2,5, Akihiro Murayama^2,6, Seiji Samukawa^1,2,3 (IFS, Tohoku Univ¹, JST-CREST², WPI-AIMR, Tohoku Univ.³, Kobe Univ.⁴, RCAST, Univ. of Tokyo⁵, IST, Hokkaido Univ.⁶, NAIST⁷)

[30a-G20-7.1] Break(15min)

[30a-G20-8] Spin Dynamics in GaAs Nanodisks Fabricated by Top-down Lithography

^○Takayuki Kiba^1,6, Kenta Suzaki¹, Yosuke Tamura^2,6, Makoto Igarashi^2,6, Cedric Thomas^2,6, Weiguo Wu^2,6, Toshiyuki Kaizu^3,6, Yoshitaka Okada^4,6, Seiji Samukawa^2,5,6, Akihiro Murayama^1,6 (Graduate School of IST, Hokkaido Univ.¹, Inst. of Fluid Science, Tohoku Univ.², Graduate School of Eng., Kobe Univ.³, RCAST, Univ. of Tokyo⁴, WPI-AIMR Tohoku Univ.⁵, JST-CREST⁶)

[30a-G20-9] Fabrication of 3 Dimensional Array GaAs Nanodisk Structure Using Bio-template and Neutral Beam Etching

^○Mohd Erman Fauzi^1,5, Yosuke Tamura^1,5, Akio Higo², Yunpeng Wang³, Masakazu Sugiyama⁴, Yoshiaki Nakano³, Seiji Samukawa^1,2,5 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², RCAST, Univ. of Tokyo³, School of Eng., Univ. of Tokyo⁴, JST-CREST⁵)

[30a-G20-10] ▲Type-II Germanium Nanodisk for Photovoltaic Applications

[30a-G20-11] △Fabrication of Germanium Nano-Structure Using Bio-template and Neutral Beam Etching

^○Mohd Erman Fauzi^1,4, Makoto Igarashi^1,4, Weiguo Hu^1,4, Yosuke Tamura^1,4, Akira Wada¹, Ichiro Yamashita³, Seiji Samukawa^1,2,4 (IFS, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², NAIST³, JST-CREST⁴)

[30a-G20-12] Reflectance distribution of a GaAs/Air multilayer cavity fabricated by sacrificial etching

^○Hidetada Komatsu¹, Yoshinori Nakagawa^1,2, Ken Morita¹, Takahiro Kitada¹, Toshirou Isu¹ (Tokushima Univ.¹, NICHIA Corp.²)

[30a-G20-13] ▲Enhancement of light extraction efficiency by evanescent wave coupling effect in AlGaInP light-emitting diodes

^○Guodong Hao¹, XueLun Wang¹ (National Institute of Advanced Industrial Science and Technology (AIST)¹)

[30a-G20-14] Electrochemical Formation and Optical Characterization of GaN Porous Structures

^○Yusuke Kumazaki¹, Akio Watanabe¹, Ryouhei Jinbo¹, Zenji Yatabe¹, Taketomo Sato¹ (RCIQE, Hokkaido Univ.¹)

[30a-G20-15] Second harmonic generation from germanium doped silica thin film

^○Ibuki Kawamura¹, Kenji Imakita¹, Minoru Fujii¹ (Kobe Univ.¹)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.2 Ultrathin films and quantum nanostructures