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Special Symposium » ・Special Symposium : Research Frontier of Solid State Electornics:New history of Solid State Devices and Materials Conference

Special Symposium

[29p-G11-1~10] Research Frontier of Solid State Electornics:New history of Solid State Devices and Materials Conference

Fri. Mar 29, 2013 1:30 PM - 5:15 PM G11 (B5 2F-2205)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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[29p-G11-1] Orpning remarks

Tanemasa Asano¹ (Kyushu University¹)

[29p-G11-2] SSDM---the window open to the world for my research results

Yutaka Hayashi¹ (AIST¹)

[29p-G11-3] Development of HEMT and SSDM

Takashi Mimura¹ (Fujitsu Laboratories/NICT¹)

[29p-G11-4] Development of a nonvolatile STT-RAM and its future evolution

Tetsuo Endo¹ (Tohoku University¹)

[29p-G11-4.1] Break(15min)

[29p-G11-5] Recent advances of organic semiconductors

Kazuo Takimiya¹ (Hiroshima University¹)

[29p-G11-6] MEMS technologies for bio- and material science applications

Hiroshi Toshiyoshi¹ (University of Tokyo¹)

[29p-G11-7] Prospects of carbon nanotube thin-film transistors

Takashi Mizutani¹ (Nagoya University¹)

[29p-G11-8] Progress and future challenges of SiC power devices for energy efficiency

Tsunenobu Kimoto¹ (Kyoto University¹)

[29p-G11-9] Future direction of crystalline silicon and III-V solar cell R&D

Yoshio Ohshita¹ (Toyota Technological Institute¹)

[29p-G11-10] Closing remarks

Kazuo Tsutsui¹ (Tokyo Tech.¹)