[27a-G20-2] Growth of Ge Dots on Si using Sub-monolayer Carbon Buffer Layer
Keywords:Ge、ドット
Regular sessions(Oral presentation)
15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals
Wed. Mar 27, 2013 9:30 AM - 12:00 PM G20 (B5 4F-2404)
Keywords:Ge、ドット