The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Poster presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[27a-PA7-1~27] 14.4 Optical properties and light-emitting devices

Wed. Mar 27, 2013 9:30 AM - 11:30 AM PA7 (1st gymnasium)

[27a-PA7-2] Local structural analysis on Eu ions in selective area grown GaN by fluorescence XAFS

Hironori Ofuchi1, Ryosuke Hasegawa2, Dong-gun Lee2, Ryuta Wakamatsu2, Takanori Matsuno2, Atsushi Koizumi2, Tetsuo Honma1, Yasufumi Fujiwara2 (JASRI/SPring-81, Osaka Univ.2)

Keywords:XAFS、GaN、Eu