[27a-PB2-1~24] 6.3 Oxide-based electronics

[27a-PB2-2] △Resistance change mechanism of CB-ReRAM revealed by impedance characteristics measurement

^○masato yoshihara¹, kentaro kinoshita^1,2, sho yura¹, satoru kishida^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

Keywords:CB-RAM、インピーダンス測定、HfO2