[27a-PB2-1~24] 6.3 Oxide-based electronics

[27a-PB2-3] △Effect of Deposition Angle on Reset Switching Characteristics in ReRAM Prepared by Using Glancing Angle Deposition

^○Yusuke Sawai¹, Kenntarou Kinosita^1,2, Takahiro Fukuhara¹, Satoru Kishida^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

Keywords:ReRAM、斜め堆積法、NiO