[27p-A6-1~16] 6.2 Carbon-based thin films

[27p-A6-16] △Temperature Dependence of Diamond Lateral Junction Field Effect Transistor

^○Yuto Hoshino¹, Takayuki Iwasaki¹, Kohei Tuzuki¹, Hiromitsu Kato², Toshiharu Makino², Masahiko Ogura², Daisuke Takeuchi², Hideyo Ohkushi², Satoshi Yamasaki², Mutsuko Hatano¹ (Tokyo Tech.¹, AIST²)

Keywords:ダイヤモンド、接合型FET