[27p-F2-1~15] 6.3 Oxide-based electronics

[27p-F2-1] Characteristics of BiFeO₃ Ferroelectric Resistive Switching Memory Controlled by Engineering the Interfacial Band Structure

^○Atsushi Tsurumaki-Fukuchi¹, Hiroyuki Yamada¹, Akihito Sawa¹ (AIST¹)

Keywords:抵抗スイッチング、強誘電体、ReRAM