[27p-F2-4] △A role of electrode in resistive switching effect of metal-oxides
Keywords:ReRAM、抵抗変化型メモリ、AFM
Regular sessions(Oral presentation)
06. Thin Films and Surfaces » 6.3 Oxide-based electronics
Wed. Mar 27, 2013 1:30 PM - 5:30 PM F2 (E3 3F-303)
Keywords:ReRAM、抵抗変化型メモリ、AFM