[27p-G19-1~9] 15.2 II-VI-group crystals

[27p-G19-3] Effects of ZnSeTe p-side contact layers on BeZnSeTe-related II-VI compound optical devices on InP substrates

^○（B）shingo Takamatsu¹, Ichirou Nomura¹, Toshiki Kobayashi¹, Katsumi Kishino¹ (Sophia Univ.¹)

Keywords:半導体、コンタクト層、ZnSeTe