[27p-G21-1~18] 15.4 III-V-group nitride crystals

[27p-G21-13] △Enhancement of step flow in MOVPE-grown (0001)GaN by In-surfactant effect

^○（B）Takashi Aisaka¹, Tomoyuki Tanikawa^1,2, Kanako Shojiki¹, Takeshi Kimura^1,2, Takuya Iwabuchi¹, Takashi Hanada^1,2, Ryuji Katayama^1,2, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST-CREST.²)

Keywords:窒化物半導体、サーファクタント、GaN