[27p-G21-1~18] 15.4 III-V-group nitride crystals

[27p-G21-17] ▲Improvement of the luminescence efficiency of N-face (000-1) InGaN multiple quantum wells by InGaN underlying layers

^○Chia-Hung Lin¹, Tetsuya Akasaka¹, Hideki Yamamoto¹ (NTT Basic Research Lab.¹)

Keywords:multiple quantum wells